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A kind of boron material and its preparation method and application

A host material, phosphorescent device technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of increasing the molecular weight of the compound, good hole/electron balance ability, and reducing the degree of conjugation

Active Publication Date: 2018-08-10
SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, boron-containing substances are rarely used as host materials in the field of organic electroluminescence.

Method used

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  • A kind of boron material and its preparation method and application
  • A kind of boron material and its preparation method and application
  • A kind of boron material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A preparation method of boron material, the steps of the method are as follows:

[0028] Step 1: Dissolve 3.00g of 3-bromospirofluorene ring-closed triphenylamine in anhydrous tetrahydrofuran under the protection of nitrogen, cool to -78°C, and then add 3.9mL of n-butyllithium dropwise. Reaction at ℃ for 1h;

[0029] The second step: add a tetrahydrofuran solution containing 2.49 g of bis(trimethylphenyl)boron fluoride to the reaction system of the first step, react at a temperature of -78°C for 2 hours, then raise the temperature to room temperature, and react at room temperature for 12 hours;

[0030] The third step: add water to the reaction system of the second step to quench the reaction, then wash with water, then extract the organic layer with dichloromethane, then dry the organic layer with anhydrous sodium sulfate, then spin dry, and use a volume ratio of 1 :5 dichloromethane / petroleum ether passes through the column, spins dry again, recrystallizes, obtains t...

Embodiment 2

[0033] A preparation method of boron material, the steps of the method are as follows:

[0034] Step 1: Dissolve 4.00g of 4-bromospirofluorene ring-closed triphenylamine in anhydrous tetrahydrofuran under the protection of nitrogen, cool to -78°C, and then add 5.2mL of n-butyllithium dropwise. Reaction at ℃ for 1h;

[0035] The second step: add a tetrahydrofuran solution containing 3.32 g of bis(trimethylphenyl)boron fluoride to the reaction system of the first step, react at a temperature of -78°C for 2 hours, then raise the temperature to room temperature, and react at room temperature for 12 hours;

[0036] The third step: add water to the reaction system of the second step to quench the reaction, then wash with water, then extract the organic layer with dichloromethane, then dry the organic layer with anhydrous sodium sulfate, then spin dry, and use a volume ratio of 1 :5 dichloromethane / petroleum ether passes through the column, spins dry again, recrystallizes, obtains t...

Embodiment 3

[0039] A preparation method of boron material, the steps of the method are as follows:

[0040] Step 1: Dissolve 4.50g of 3-bromospirofluorene in anhydrous tetrahydrofuran under the protection of nitrogen, cool to -78°C, then add 5.7mL of n-butyllithium dropwise, and react at -78°C 1h;

[0041] The second step: add a tetrahydrofuran solution containing 3.98 g of bis(trimethylphenyl)boron fluoride to the reaction system of the first step, react at a temperature of -78°C for 2 hours, then raise the temperature to room temperature, and react at room temperature for 12 hours;

[0042] The third step: add water to the reaction system of the second step to quench the reaction, then wash with water, then extract the organic layer with dichloromethane, then dry the organic layer with anhydrous sodium sulfate, then spin dry, and use a volume ratio of 1 :5 dichloromethane / petroleum ether passes through the column, spins dry again, recrystallizes, obtains the SF-3-DMB boron material of ...

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Abstract

The present invention provides a boron-based material and its preparation method and application. The chemical structural formula of the boron-based material is: wherein A is a ring-closed triphenylamine group at a different position or a spirofluorene group at a different position, and its chemical structure The structural formula is: ,,, or. The boron-based material of the present invention effectively reduces the conjugation degree of the host material, increases the molecular weight of the compound, and at the same time utilizes the excellent electron-absorbing ability of the boron element, and can be formed by connecting with an electron-donating group with a helical structure. Bipolar host materials with high triplet state and good hole / electron balance ability have different characteristics compared with commonly used phosphorescent host materials, and can be widely used in the field of organic electroluminescence.

Description

technical field [0001] The invention belongs to the technical field of boron materials, and in particular relates to a boron material and its preparation method and application. Background technique [0002] Since 1987 Professor Deng Qingyun et al. (C. W. Tang, S. A. VanSlyke, Appl. Phys. Lett. 1987, 51 , 913-915.) Invented the first generation of practical organic electroluminescent diodes, the research of organic electroluminescence has become a hot spot, and is considered to be a new generation of flat panel display technology with excellent development prospects. Compared with inorganic electroluminescent materials, organic electroluminescent materials have the advantages of high luminous efficiency, strong luminous brightness, low energy consumption, low driving voltage, and simple manufacture. [0003] Organic electroluminescent materials are generally classified into singlet fluorescent dyes and triplet phosphorescent dyes. However, due to the strong concentration q...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F5/02H01L51/54
CPCC07F5/027H10K85/624H10K85/6572
Inventor 廖良生蒋佐权薛苗苗
Owner SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
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