Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor sensor and fabrication method thereof

A technology of thin-film transistors and sensors, applied in the field of thin-film transistor sensors and their preparation, can solve problems such as difficult, difficult to achieve medical implantation in vivo, difficult to achieve biocompatibility, etc.

Active Publication Date: 2016-05-04
BOE TECH GRP CO LTD
View PDF4 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The basic structure, process and performance of the usual pressure sensor, because it is not flexible and elastic, it is difficult to achieve the biocompatibility required by the human body
It is difficult to match the humanization of medical in vitro and wearable devices related to the human body
Difficult to reach medical possibilities for in vivo implantation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor sensor and fabrication method thereof
  • Thin film transistor sensor and fabrication method thereof
  • Thin film transistor sensor and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] At least one embodiment of the present invention provides a method for preparing a thin film transistor sensor, the method comprising the following steps:

[0031] forming a first gate on the inner side of the first flexible substrate to prepare a first substrate;

[0032] forming a second grid on the inner side of the second flexible substrate to prepare a second substrate;

[0033] An active layer facing the first gate and a source and a drain electrically connected to the active layer are also formed on the first flexible substrate;

[0034] The first substrate and the second substrate are disposed opposite to each other, so that the second gate and the first gate at least partly face each other and are insulated from each other when the TFT sensor is in a non-working state.

[0035] The preparation method of the thin film transistor sensor can adopt a common process, is simple and easy, and has low manufacturing and maintenance costs.

Embodiment 1

[0038] This embodiment provides a thin film transistor sensor 12, such as figure 2As shown, a first substrate 10 and a second substrate 20 disposed opposite to each other are included. The first substrate 10 includes a first flexible substrate substrate 101 and a first gate 102 disposed on the inner side of the first flexible substrate substrate 101 . The second substrate 20 includes a second flexible substrate substrate 201 and a second gate 202 disposed on the inner side of the second flexible substrate substrate 201 . The second gate 202 is at least partially opposite to the first gate 201 and is insulated from each other when the TFT sensor 12 is in a non-working state. An active layer 103 opposite to the first gate, and a source 104 and a drain 105 electrically connected to the active layer 103 are also disposed on the first flexible substrate 101 . The second gate 202 and the first gate 201 at least partly face each other so that the thin film transistor sensor 12 can...

Embodiment 2

[0055]Different from Embodiment 1, the thin film transistor sensor provided in this embodiment does not insulate the thin film transistor sensors 12 from each other when they are in a non-working state by disposing spacers around the edge of the first gate. but as Figure 7 As shown, a pressure conductive material 40 is provided between the first substrate 10 and the second substrate 20, thereby separating the first grid 102 from the second grid 202, and the pressure conductive material 40 is applied with a pressure equal to or exceeding a predetermined pressure. When conductive. The predetermined pressure may, for example, refer to the pressure at which the pressure conductive material changes from an insulating state to a conductive state. The pressure conductive material is in an insulating state when it is not under pressure or the pressure does not exceed a predetermined pressure, so that the first grid 102 and the second grid 202 are insulated from each other, and the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a thin film transistor sensor and a fabrication method thereof. The thin film transistor sensor comprises a first substrate and a second substrate, wherein the first substrate and the second substrate are opposite to each other, the first substrate comprises a first flexible substrate and a first grid arranged on the inner side of the first flexible substrate, the second substrate comprises a second flexible substrate and a second grid arranged on the inner side of the second flexible substrate, at least parts of the second grid and the first gird are in opposite, the second grid and the second grid are isolated from each other when the thin film transistor sensor is in a non-working state, an active layer, a source and a drain are further arranged on the first flexible substrate, the active layer is opposite to the first grid, the source and the drain are electrically connected with the active layer. In the thin film transistor sensor, spatial point contact changes of the first grid and the second grid of a flexible thin film transistor are utilized to realize the switching function of the thin film transistor, and thus, the effect of the sensor is achieved.

Description

technical field [0001] At least one embodiment of the present invention relates to a thin film transistor sensor and a manufacturing method thereof. Background technique [0002] In recent years, with the rapid development of smart wearable devices, in vitro medical devices related to the human body, and in vivo implanted medical devices, pressure sensors have received more and more attention. By setting the pressure sensor, the change of the external pressure signal can be sensed. [0003] Research on pressure sensors can be based on a variety of working principles, including capacitive, piezoresistive, piezoelectric, etc. Traditional piezoelectric film sensors mainly work based on the piezoelectric effect. The piezoelectric effect means, for example, that when certain dielectrics are deformed by external forces in a certain direction, polarization will occur inside them, and at the same time, opposite charges will appear on its two opposite surfaces. When the external fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336G01L1/16G01L9/08H10K99/00
CPCG01L1/16G01L9/08H01L29/66409H01L29/786H10K10/80Y02E10/549G01L1/18H10K77/111H10K10/482H10K10/88H10K10/466H10K71/60
Inventor 田雪雁
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com