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Depressurizing diffusion furnace and carrier plate bearing device

A technology of a carrying device and a diffusion furnace, which is applied to furnaces, furnace types, electrical components, etc., can solve the problems of difficulty in preparing shallow surface PN junctions, high sheet resistance, and poor control of doping uniformity of silicon wafers, and achieves tightness. Good, large partial pressure ratio, reducing the effect of surface recombination

Active Publication Date: 2016-05-04
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

With the development of solar cells in the direction of high efficiency and low cost, the doping concentration on the surface of silicon wafers continues to decrease, the junction depth of PN junctions becomes shallower and shallower, and the sheet resistance becomes higher and higher. The control of doping uniformity on silicon wafers by atmospheric diffusion It is getting worse and it is difficult to prepare high-quality shallow surface PN junctions

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  • Depressurizing diffusion furnace and carrier plate bearing device
  • Depressurizing diffusion furnace and carrier plate bearing device
  • Depressurizing diffusion furnace and carrier plate bearing device

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Embodiment Construction

[0030] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0031] Figure 1 to Figure 4 A decompression diffusion furnace of the present invention is shown, which includes a box-type resistance furnace body 3, a furnace door assembly 4 and a quartz reaction chamber 5. The quartz reaction chamber 5 is placed in the box-type resistance furnace body 3, and through the furnace door Component 4 is sealed, and the inner side of the furnace door component 4 is provided with an annular sealing ring 45 that closely fits the end face of the quartz reaction chamber 5. The cooling device 6 can be used to cool the annular sealing ring 45 to avoid overheating failure and improve the sealing performance of the decompression diffusion furnace. The silicon wafer to be processed is placed in the quartz reaction chamber 5 . In the decompression diffusion furnace of the present invention, the silicon wafer to ...

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Abstract

The invention discloses a depressurizing diffusion furnace and a carrier plate bearing device. The depressurizing diffusion furnace comprises a box type resistance furnace body, a furnace door assembly and a quartz reaction chamber; the quartz reaction chamber is arranged in the box type resistance furnace body and is sealed through the furnace door assembly; the inner side of the furnace door assembly is provided with an annular sealing ring which is closely attached to an end surface of the quartz reaction chamber; and an end portion of the quartz reaction chamber, which is adjacent to the annular sealing ring, is sleeved with a cold air cooling device. The depressurizing diffusion furnace of the invention has the advantages of simple structure, high production capacity and the like.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor electronic components, in particular to a decompression diffusion furnace and a carrier plate carrying device. Background technique [0002] At present, the traditional solar energy production line mainly adopts the normal pressure diffusion process to prepare the PN junction of the solar cell, that is, the reaction tube of the diffusion furnace is under normal pressure or slightly positive pressure. With the development of solar cells in the direction of high efficiency and low cost, the doping concentration on the surface of silicon wafers continues to decrease, the junction depth of PN junctions becomes shallower and shallower, and the sheet resistance becomes higher and higher. The control of doping uniformity on silicon wafers by atmospheric diffusion It is getting worse and worse, and it is difficult to prepare high-quality shallow-surface PN junctions. With the developm...

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Application Information

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IPC IPC(8): H01L21/67F27B17/00
CPCF27B17/0025H01L21/67109
Inventor 刘良玉彭宜昌禹庆荣曹骞苏卫中
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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