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Silicon carbide Schottky diode-based Spice model and construction method thereof

A Schottky diode, silicon carbide technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problems of system stability, output current and voltage electromagnetic oscillation, interference, etc., to accurately evaluate dynamic performance Effect

Active Publication Date: 2016-05-04
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the highly doped epitaxial layer concentration, the depletion layer capacitance of SiC Schottky diodes is generally greater than that of Si-based PINs.
When a SiC Schottky diode is used in a chopper circuit, it will cause electromagnetic oscillation of the output current and voltage, causing system stability problems, such as electromagnetic interference and additional energy loss

Method used

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  • Silicon carbide Schottky diode-based Spice model and construction method thereof
  • Silicon carbide Schottky diode-based Spice model and construction method thereof
  • Silicon carbide Schottky diode-based Spice model and construction method thereof

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Embodiment Construction

[0033] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0034] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element refe...

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Abstract

The invention discloses a silicon carbide Schottky diode-based Spice model and a construction method thereof. The model comprises a voltage-controlled capacitor, a voltage-controlled resistor, a voltage-controlled body resistor, and a contact resistor, wherein the voltage-controlled capacitor is used for indicating the depletion layer capacitance of the silicon carbide Schottky diode; the voltage-controlled resistor is connected with the voltage-controlled capacitor in parallel and used for indicating the depletion layer current of the silicon carbide Schottky diode; the voltage-controlled body resistor is in series connection with parallel connection nodes of the voltage-controlled capacitor and the voltage-controlled resistor, and used for indicating the body resistance of the silicon carbide Schottky diode; the contact resistor is connected with the voltage-controlled body resistor in series. The silicon carbide Schottky diode-based Spice model disclosed by the invention has the advantage that the obtained diode dynamic curve is well matched with the experimental data. The model can be used for evaluating dynamic performance of the diode accurately and also used for guiding design and application of the silicon carbide Schottky diode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and specifically designs a Spice model based on a silicon carbide Schottky diode and a construction method thereof. Background technique [0002] In power system applications, SiC Schottky diodes have higher switching speed and lower switching losses than Si-based PINs. However, due to the highly doped epitaxial layer concentration, the depletion layer capacitance of SiC Schottky diodes is generally larger than that of Si-based PINs. When a SiC Schottky diode is used in a chopper circuit, it will cause electromagnetic oscillation of the output current and voltage, causing system stability problems, such as electromagnetic interference and additional energy loss. The main reason for the oscillation is caused by the RLC second-order network composed of the depletion layer capacitance and depletion layer resistance of the Schottky diode, the parasitic stray inductance in the circuit, and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 岳瑞峰周新田王燕
Owner TSINGHUA UNIV
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