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A kind of preparation method of ge‑sb‑se chalcogenide nanowire

A nanowire, ge-sb-se technology, applied in the field of nanomaterials, can solve the problems of undisclosed Ge-Sb-Se chalcogenide nanowires, and achieve wide optical transmission range, high linear and nonlinear refractive index, The effect of good thermal stability

Active Publication Date: 2017-09-05
NINGBO UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are no relevant research reports on Ge-Sb-Se chalcogenide nanowires and their preparation methods at home and abroad.

Method used

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  • A kind of preparation method of ge‑sb‑se chalcogenide nanowire
  • A kind of preparation method of ge‑sb‑se chalcogenide nanowire
  • A kind of preparation method of ge‑sb‑se chalcogenide nanowire

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Weigh Ge 20 Sb 15 Se 65 Put 0.4g of raw material into a quartz crucible, place the crucible in the high temperature zone of a horizontal tube furnace, and place the gold-plated silicon wafer in the low temperature zone, the distance between the high temperature zone and the low temperature zone is 15cm, and vacuumize the furnace , when the pressure reaches 3×10 -2 Start argon at torr, set the flow rate of argon to 100 sccm, and start heating after 10 minutes of argon, in which the temperature in the high temperature zone is set to 500°C, and the temperature in the low temperature zone is set to 400°C, keep at this temperature for 120 minutes, the pressure in the tube remains At 2 torr, after the deposition is over, let the furnace cool down naturally, and take out the grown nanowires when the temperature drops to 70°C. The above substrate is SiO 2 / Si(100) substrate. The Ge-Sb-Se material in the high temperature zone is in the upstream of the gas flow, and the gold...

Embodiment 2

[0033] Same as Example 1, the difference lies in that the temperature in the low temperature zone is set to 350°C. Test the growth status of the Ge-Sb-Se nanowires prepared in the above-mentioned embodiment 2, the test results obtained refer to figure 2 .

Embodiment 3

[0035] Same as Example 1, the difference lies in that the temperature in the low temperature zone is set to 300°C. Test the growth status of the Ge-Sb-Se nanowires prepared in the above-mentioned embodiment 3, the test results obtained refer to image 3 .

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Abstract

The invention discloses a preparation method of Ge-Sb-Se chalcogenide nanowires. According to the invention, high purity Ge20Sb15Se65 glass powder is taken as a raw material, a horizontal tube furnace is adopted, high purity argon gas is taken as a working gas, and a gold-plated silicon slice substrate material is adopted for surface deposition; the substrate is subjected to ultrasonic washing with deionized water and absolute ethyl alcohol respectively; the temperature of a high temperature zone is controlled to be 450 to 550 DEG C, the temperature of a low temperature zone is controlled to be 300 to 400 DEG C, argon gas flow amount is controlled to be 130 to 150sccm, and vacuum degree is controlled to be 1 to 5torr; and the Ge-Sb-Se chalcogenide nanowires are obtained via 90 to 120min of deposition. Controllability of the preparation method is high; production cost is low; repeatability is high; and the obtained Ge-Sb-Se chalcogenide nanowires are uniform and compact.

Description

technical field [0001] The invention relates to the field of nanometer materials, in particular to a method for preparing Ge-Sb-Se chalcogenide nanowires. Background technique [0002] The development of modern high-tech has made it possible and a trend for the research of materials to be researched on a smaller scale. Nanomaterials are materials with a new structure developed in the mid-1980s. Because of their excellent performance in size reduction and unique structural characteristics, they are used in optics, electricity, magnetism, Catalysis and sensors have broad application prospects and have aroused widespread concern in the scientific community. Countries are also sparing no effort to invest in nanotechnology in order to gain the right to speak in the nano field. Among them, the study of one-dimensional nanostructure system or nanomaterials is not only the basis for the study of other low-dimensional materials, but also closely related to nanoelectronic devices and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00B82Y40/00
CPCC01B19/007C01P2002/72C01P2002/82C01P2004/03C01P2004/16
Inventor 李增光吕业刚马亚东沈祥王国祥戴世勋
Owner NINGBO UNIV
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