A kind of plasma processing equipment

A processing equipment and plasma technology, used in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve problems such as poor process quality, low yield, asymmetric etching patterns or eccentricity, etc., to improve uniformity. performance, improve inter-chip uniformity, improve process quality and yield

Active Publication Date: 2019-11-29
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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AI Technical Summary

Problems solved by technology

[0005] In order to improve the throughput of a single process, usually a plurality of substrates S are carried on the tray 14, such as figure 2 As shown, the tray 14 is formed with three areas of the center, the inner ring layer and the outer ring layer along its radial direction, and are respectively 1 piece, 7 pieces and 14 pieces. In practical applications, it is difficult to guarantee the two basic areas in the PSS process. The uniformity of the graphic morphology between the slices (that is, the uniformity between the slices), especially the uniformity between the slices in the same circle layer of the inner ring layer or the outer ring layer, which often causes the etched pattern to appear asymmetrical or eccentric Phenomenon, resulting in poor process quality and low yield

Method used

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  • A kind of plasma processing equipment
  • A kind of plasma processing equipment
  • A kind of plasma processing equipment

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Embodiment Construction

[0031] In order for those skilled in the art to better understand the technical solutions of the present invention, the plasma processing equipment provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0032] image 3 It is a schematic structural diagram of the plasma processing equipment provided by the first embodiment of the present invention. see image 3 , the plasma processing equipment provided in this embodiment includes a reaction chamber 20 , a driving device 21 and a rotating shaft 22 . Wherein, a carrying device 201 and a tray 202 are arranged in the reaction chamber 20, and the tray 202 is used to carry a plurality of substrates S, such as image 3As shown, a plurality of substrates S are placed on the tray 202 along its circumferential direction, and the plurality of substrates S are located in the same circle layer. The so-called same circle layer refers to the annular area on the ...

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Abstract

The invention provides a plasma processing apparatus comprising a reaction chamber, a drive device and a rotating shaft. A carrying device and a tray are disposed in the reaction chamber. The tray is used for carrying a plurality of substrates. The carrying device is used for carrying the tray. An adsorbing electrode is disposed in the carrying device, and is connected electrically with a power supply so that the tray and the carrying device can be fixed by way of electrostatic adsorption. The rotating shaft is disposed corresponding to the center region of the tray. One end of the rotating shaft is connected fixedly with the carrying device, and the other end of the rotating shaft is connected with a drive shaft of the drive device. The drive shaft of the drive device is used for driving the rotating shaft to rotate horizontally around the center axis of the rotating shaft, so as to drive the carrying device and the tray to rotate horizontally around the center axis of the tray. The plasma processing apparatus can improve the uniformity among the plurality of substrates in the same circle, thereby improving the uniformity of the plurality of substrates in a single process.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to plasma processing equipment. Background technique [0002] In the technical fields of integrated circuit manufacturing, solar photovoltaic, semiconductor lighting, etc., plasma processing equipment is one of the most widely used equipment. In practical applications, inductively coupled plasma processing equipment can obtain high-density plasma at low working pressure, simple structure, low cost, and can control the radio frequency source of plasma and the radio frequency control of plasma energy. The advantages of independent control of the source are widely used at present. [0003] Patterned Sapphire Substrate (Patterned Sapphire Substrate, hereinafter referred to as PSS) is currently the mainstream technology for improving the light output efficiency of LED devices. Inductively coupled plasma processing equipment is usually used to etch the sapp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/687H01J37/32
Inventor 马亮王铮
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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