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sic MOSFET overcurrent short circuit detection circuit and detection protection system

A short-circuit detection and short-circuit protection technology, applied in circuits, measuring electricity, measuring electrical variables, etc., can solve the problems of damage to SiC MOSFETs and high cost

Active Publication Date: 2018-06-12
深圳市英威腾光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the cost of the current SiC MOSFET is relatively high. In practical applications, due to overload, internal drive errors, interference or improper control, the current flowing through the SiC MOSFET is far greater than the requirements of its safe operating area SOA. If there is no corresponding measure Deprotection or too slow protection will permanently damage the expensive SiC MOSFET, so there is an urgent need for an over-current short-circuit detection circuit to quickly detect the SiC MOSFET to trigger the over-current short-circuit protection circuit for timely over-current short-circuit protection of the SiC MOSFET

Method used

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  • sic MOSFET overcurrent short circuit detection circuit and detection protection system

Examples

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Effect test

Embodiment 1

[0065] See figure 1 , which shows a schematic diagram of the electrical principle of the SIC MOSFET overcurrent short circuit detection circuit provided by the present application. The SIC MOSFET overcurrent short circuit detection circuit includes: a first resistor R1, a second resistor R2, a sixth resistor R6, a seventh resistor R7, the eighth resistor R8, the ninth resistor R9, the tenth resistor R10, the twenty-ninth resistor R29, the thirtieth resistor R30, the third capacitor C3, the first diode D1, the second diode D2, the The four diodes D4, the fifth diode D5, the second triode Q2 and the switching current expansion device Sef.

[0066] Wherein, the first end of the first resistor R1 (that is, the common end A of the first resistor R1, the first diode D1 and the second diode D2) is connected to the PWM signal output of the drive circuit unit to which the SIC MOSFET to be detected belongs. The first end of the first resistor R1 is connected to the cathode of the first...

Embodiment 2

[0086] In this embodiment, another schematic diagram of the electrical principle of the SIC MOSFET overcurrent short circuit detection circuit provided by the application is shown, please refer to Figure 5 , the SIC MOSFET overcurrent short circuit detection circuit provided in this embodiment is figure 2 The shown SICMOSFET overcurrent short circuit detection circuit also includes: a third resistor R3, a fourth resistor R4, a fifth resistor R5 and a first MOSFET T1.

[0087] The gate of the first MOSFET T1 is connected to the second end of the first resistor R1, the drain of the first MOSFET T1 is connected to the first end of the third resistor R3, and the third resistor R3 The second terminal of the first MOSFET T1 is connected to the positive voltage +VCC1 of the first driving isolation power supply, and the source of the first MOSFET T1 is respectively connected to the first terminal of the fourth resistor R4 and the first terminal of the fifth resistor R5 connected, t...

Embodiment 3

[0095] In this example, different figure 2 shows the SIC MOSFET overcurrent short circuit detection circuit, see Figure 8 The switching current expansion device Sef in the SIC MOSFET overcurrent short circuit detection circuit provided in this embodiment may also be the third MOSFET T3.

[0096] When the switch current expansion device Sef is the third MOSFET T3, compared to figure 2 As shown in the SIC MOSFET over-current short-circuit detection circuit, the SIC MOSFET over-current short-circuit detection circuit provided in this embodiment further includes: a ninth diode D9, a fourth capacitor C4 and a thirty-second resistor R32.

[0097] Wherein, the gate of the third MOSFET T3 serves as the first terminal of the third MOSFET, the drain of the third MOSFET T3 serves as the second terminal of the third MOSFET T3, and the source of the third MOSFET T3 pole as the third end of the third MOSFET T3;

[0098] The cathode of the ninth diode D9 is respectively connected to th...

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Abstract

The invention provides an SIC (Silicon Carbide) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) over-current short-circuit detection circuit and detection protection system. The SIC MOSFET over-current short-circuit detection circuit comprises a first resistor, a second resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a 29th resistor, a 30th resistor, a third capacitor, a first diode, a second diode, a fourth diode, a fifth diode, a second triode and a switch current extending device. For the SIC MOSFET over-current short-circuit detection circuit, the switch current extending device is used, and the switching speed of the switch current extending device is higher than the switching speed of a SiC MOSFET; when the SiC MOSFET is completely turned on, the switch current extending device can be quickly turned on so that the detection circuit can quickly give a response and quickly enter into the detection stage and quickly detect whether over-current short circuit occurs in the SiC MOSFET. Therefore, the detection speed is improved so that the speed for the over-current short-circuit protection circuit to protect the SiC MOSFET is improved.

Description

technical field [0001] The present application relates to the field of power electronics, in particular to a SIC MOSFET overcurrent short circuit detection circuit and detection and protection system. Background technique [0002] SIC (silicon carbide) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a silicon carbide power switching device that has attracted more attention at present. Its most obvious advantages are: low on-resistance and high-speed switching , the driving circuit is simple and has good compatibility with the existing power device (silicon power MOSFET and IGBT) driving circuit. [0003] However, the cost of the current SiC MOSFET is relatively high. In practical applications, due to overload, internal drive errors, interference or improper control, the current flowing through the SiC MOSFET is far greater than the requirements of its safe operating area SOA. If there is no corresponding measure Deprotection or too slow protection will permane...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/02G01R31/26H03K17/08
CPCG01R31/2621G01R31/50H03K17/0822
Inventor 凌家树胡杰周强
Owner 深圳市英威腾光伏科技有限公司
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