Surface-wave plasma equipment

Abstract

The invention provides surface wave plasma equipment. The surface wave plasma equipment comprises a microwave generation device, a microwave transmission device and a reaction cavity which are successively connected; the microwave generation device is used to generate a microwave forming a surface-wave plasma; the microwave transmission device comprises wave guides and a microwave antenna, the microwave antenna is divided into a plurality of sub antennas, the sub antennas correspond to different areas of the reaction cavity, the number of the wave guides is equal to the number of the sub antennas, the wave guides are correspondingly connected with the sub antennas one by one, and the microwave generated by the microwave generation device is coupled to the different areas of the reaction cavity via the wave guides and the sub antennas corresponding to the wave guides; and, through respective adjustments of power of the microwave coupled to the different areas of the reaction cavity, uniform and large-area surface-wave plasmas are formed over a substrate in the reaction cavity. According to the surface-wave plasma equipment provided by the invention, the uniform and large-area surface-wave plasmas can be formed over the substrate under different process conditions, and then process quality can be improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a surface wave plasma device. Background technique [0002] Plasma equipment is widely used in the manufacturing process of integrated circuits or MEMS devices. Currently, plasma devices include capacitively coupled plasma devices, inductively coupled plasma devices, electron cyclotron resonance plasma devices, and surface wave plasma devices. Among them, capacitively coupled plasma equipment is easy to generate large-area uniformly distributed plasma, which is suitable for etching dielectric thin films; electron cyclotron resonance plasma equipment can obtain plasma with higher density at lower pressure, but it needs to introduce External magnetic field, so the cost is relatively high; compared with other plasma equipment, surface wave plasma equipment can obtain higher plasma density, lower electron temperature, and does not need to increase the ...

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Problems solved by technology

[0003] However, the density distribution of the surface wave plasma generated by the existing surface wave plasma equipment is constant. Under different process conditions (for example, pressure, process gas type), the density distribution of the plasma diffused to the substrate S will vary. different, which can result in poor uniformity of the plasma over a large area of ​​the wafer under different process conditions, resulting in poor process quality

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