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Neuron electrical activity simulator under electromagnetic radiation

An electromagnetic radiation, neuron technology, applied in the field of electronics, can solve the problems affecting the regularity of neuron electrical activity, excitatory effect, etc.

Inactive Publication Date: 2016-03-23
LANZHOU UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] But no matter what kind of research, when neurons or neural tissues are in a complex electromagnetic environment, such as figure 1 As shown, the behavior of neuron electrical activity must be affected by multiple scales, such as the conductance and activation of ion channels, and the excitability may be affected, which will further affect the law of neuron electrical activity

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  • Neuron electrical activity simulator under electromagnetic radiation
  • Neuron electrical activity simulator under electromagnetic radiation
  • Neuron electrical activity simulator under electromagnetic radiation

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Embodiment Construction

[0016] The present invention will be described in detail below with reference to the drawings and embodiments.

[0017] When using circuits to simulate the electrical activity and electromagnetic response of neurons, the key issue is how the circuit absorbs and stores external electromagnetic radiation, that is, the equivalent characterization of external electromagnetic radiation. The purpose of the present invention is to consider the electromagnetic memory effect of neuronal membrane potential discharge, based on the three-variable Hindmarsh-Rose neuron model, such as figure 1 As shown, the model is modified, the magnetic flux variable is introduced, the electromagnetic radiation of the external field is equivalent to the magnetic flux based on the mean field theory, the neuron electrical activity model in the electromagnetic environment is established, and the circuit is designed to verify its response to the external field radiation effectiveness.

[0018] Such as figure 2 As...

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Abstract

The invention provides a neuron electrical activity simulator under electromagnetic radiation. The neuron electrical activity simulator includes a neuron circuit, and is characterized in that the simulator also includes an electromagnetic radiation effect circuit and an adder, an input end of the electromagnetic radiation effect circuit is connected with an output end of the neuron circuit and equivalent outside magnetic flux, so as to input neuron response, i.e., membrane potential x and equivalent outside magnetic flux phi<ext>, an output end of the electromagnetic radiation effect circuit is connected with the adder, after an output electromagnetic radiation effect i of the electromagnetic radiation effect circuit to a neuron and an ionic current I<ext> that flows into a neuron cell membrane are summed through the adder, an input end of the neuron circuit is accessed, and after entering a stable operation state, the neuron electrical activity simulator outputs neuron response, i.e., membrane potential, which contains an electromagnetic memory effect. The neuron electrical activity simulator under electromagnetic radiation considers the electromagnetic memory effect of neuron membrane potential discharge, and guarantees the neuron electrical activity law.

Description

Technical field [0001] The invention belongs to the field of electronic technology, and specifically relates to a neuron electrical activity simulator under electromagnetic radiation. Background technique [0002] In 1952, British biologists Hodgkin and Huxley proposed an ion theory about the law of biological neuron electrical activity, and based on this, established an H-H neuron model that can simulate neuronal membrane potential activity. The model can simulate the spike discharge, cluster discharge and chaotic discharge observed in the squid axon action potential experiment under appropriate parameters and external stimuli. In 1981, Cathy Morris and Harold Lecar simplified the HH model to obtain a Morris-Lecar neuron model that includes ion channel effects. At present, among many simplified neuron models, the Hindmarsh-Rose neuron model is often used to study neuronal electrical activity The model migration. On the other hand, considering that the equipment requirements fo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/06
CPCG06N3/065
Inventor 马军任国栋
Owner LANZHOU UNIVERSITY OF TECHNOLOGY
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