A Neuron Electrical Activity Simulator Under Electromagnetic Radiation

A technology of electromagnetic radiation and neurons, applied in the field of electronics, can solve problems affecting the law of electrical activity of neurons, excitatory effects, etc.

Inactive Publication Date: 2017-09-29
LANZHOU UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

[0003] But no matter what kind of research, when neurons or neural tissues are in a complex electromagnetic environment, such as figure 1 As shown, the behavior of neuron electrical activity must be affected by multiple scales, such as the conductance and activation of ion channels, and the excitability may be affected, which will further affect the law of neuron electrical activity

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  • A Neuron Electrical Activity Simulator Under Electromagnetic Radiation
  • A Neuron Electrical Activity Simulator Under Electromagnetic Radiation
  • A Neuron Electrical Activity Simulator Under Electromagnetic Radiation

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Embodiment Construction

[0016] The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0017] When using circuits to simulate the electrical activity and electromagnetic response of neurons, the key issue is how the circuit absorbs and stores external electromagnetic radiation, that is, the equivalent description of external electromagnetic radiation. The purpose of the present invention is to consider the electromagnetic memory effect of neuron membrane potential discharge, based on the Hind marsh-Rose neuron model of three variables, such as figure 1 As shown, the model is modified, the magnetic flux variable is introduced, and the electromagnetic radiation in the external field is equivalent to the magnetic flux based on the mean field theory. The neuron electrical activity model in the electromagnetic environment is established, and the circuit is designed to verify its response to the external field radiation. efficiency.

[0018] Such...

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Abstract

The invention provides a neuron electrical activity simulator under electromagnetic radiation, comprising a neuron circuit, characterized in that it also includes an electromagnetic radiation effect circuit and an adder, and the input end of the electromagnetic radiation effect circuit is connected with the output of the neuron circuit respectively terminal, the equivalent external magnetic flux connection, the input neuron response is the membrane potential x and the equivalent external magnetic flux φext, the output terminal of the electromagnetic radiation effect circuit is connected with the adder, and the electromagnetic radiation effect circuit of the output electromagnetic radiation effect on the neuron is i The ionic current Iext flowing into the neuron cell membrane is summed by an adder, and then connected to the input terminal of the neuron circuit neuron. After the neuron electrical activity simulator works stably, it outputs the neuron response including the electromagnetic memory effect, that is, the membrane potential x. The invention considers the electromagnetic memory effect of neuron membrane potential discharge and ensures the regularity of neuron electrical activity.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to a neuron electrical activity simulator under electromagnetic radiation. Background technique [0002] In 1952, British biologists Hodgkin and Huxley proposed the ionic theory about the electrical activity of biological neurons, and based on this, they established the H-H neuron model that can simulate the neuronal membrane potential activity. Under the appropriate parameters and external stimuli, the model can simulate such phenomena as spike discharge, burst discharge and chaotic discharge observed in the axonal action potential experiment of calamari. In 1981, Cathy Morris and Harold Lecar simplified the H-H model to obtain the Morris–Lecar neuron model including ion channel effects. At present, among many simplified neuron models, the Hindmarsh-Rose neuron model is often used to study neurons Pattern shift of electrical activity. On the other hand, considerin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06N3/06
CPCG06N3/065
Inventor 马军任国栋
Owner LANZHOU UNIVERSITY OF TECHNOLOGY
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