Device and method for detecting N-type silicon on edge of polysilicon wafer

Abstract

The invention discloses a device and a method for detecting N-type silicon on the edge of a polysilicon wafer. The device comprises an operation platform, a universal meter, a universal meter fixing bracket, a red copper sheet and a red copper sheet support frame, wherein the universal meter fixing bracket and the red copper sheet support frame are arranged on the operation platform; the universal meter is fixed on the universal meter fixing bracket; and the red copper sheet is flatly put on the red copper sheet support frame. According to a detection technology disclosed by the invention, components are simple; and maintenance and repair are not needed basically. A resistance value from the front surface of the wafer to any point on the edge can be detected through the detection method, so that the problems of the stability of an etching process, the smoothness of idler wheels and a bracket of a machine and operations of the staff can be judged by easily detecting the removal condition of the N-type silicon on the edge of the polysilicon wafer.

Description

technical field [0001] The invention relates to a polysilicon detection technology, in particular to a detection of whether N-type silicon at the edge of a polysilicon wafer is completely corroded. Background technique [0002] At present, the polysilicon cell etching process is divided into two methods, one is mixed acid etching, and the other is plasma bombardment. Both methods are used to remove the N-type silicon formed by the phosphorus contacting the four sides of the silicon wafer during the diffusion process. , if the removal is not complete, the photogenerated electrons collected by the PN junction on the front of the cell will flow to the back of the PN junction along the edge diffused area and cause a short circuit. This short-circuit channel is equivalent to reducing the parallel resistance; in order to avoid the short-circuit of the PN junction at the edge of the silicon chip, which will reduce the parallel resistance of the finished battery and affect the effic...

AI Technical Summary

Problems solved by technology

Both methods have the following problems (1) It is impossible to detect whether the edge single-point PN junction is removed (2) The instrument operation test error is relatively large (3) The fragmentation rate of personnel operation is high (4) The maintenance cost of the instrument is relatively high, the existence of the above problems The removal of PN at the edge of the silicon wafer cannot be guaranteed, and the test operation is uneconomical

Images