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Photoresistor and manufacturing method thereof

A technology of photosensitive resistors and manufacturing methods, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of reduced performance parameters of photosensitive resistors, high scrap rate, poor stability, etc., and achieve reduced scrap rate, small content, and high stability Effect

Active Publication Date: 2017-02-01
NANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although adding CuCl 2 The material method can improve the sensitivity of photoresistors, but due to the instability of copper ions, that is, monovalent copper ions and divalent copper ions will change each other, which will cause the performance parameters of photoresistors to decrease after the aging process, and the stability is relatively low. Poor, one of the outstanding performances is the high scrap rate, reaching about 15%

Method used

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  • Photoresistor and manufacturing method thereof
  • Photoresistor and manufacturing method thereof
  • Photoresistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: A photosensitive resistor, comprising a ceramic substrate, a photosensitive layer, and two electrodes. The photosensitive layer is coated on the surface of the ceramic substrate. The photosensitive layer and the ceramic substrate form the main body of the photosensitive resistor. The two electrodes are respectively mounted on two sides of the main body of the photosensitive resistor. At the end, the photosensitive layer is composed of the following components:

[0037]

[0038] The rare earth chloride is one of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium chloride, or a mixture of two or more.

Embodiment 2

[0039] Embodiment 2: A photosensitive resistor includes a ceramic substrate, a photosensitive layer and two electrodes. The photosensitive layer is coated on the surface of the ceramic substrate. The photosensitive layer and the ceramic substrate form the main body of the photosensitive resistor. The two electrodes are respectively mounted on the two sides of the main body of the photosensitive resistor. At the end, the photosensitive layer is composed of the following components:

[0040]

[0041] In this embodiment, the rare earth chloride is a mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium chloride, and the rare earth chloride is composed of the following components:

[0042]

[0043] In this embodiment, the thickness of the photosensitive layer is 5 microns.

[0044] In this embodiment, the ceramic substrate is made of aluminum oxide with a purity of more than 93%.

Embodiment 3

[0045] Embodiment 3: A photosensitive resistor, comprising a ceramic substrate, a photosensitive layer and two electrodes. The photosensitive layer is coated on the surface of the ceramic substrate. The photosensitive layer and the ceramic substrate form the main body of the photosensitive resistor. The two electrodes are respectively mounted on two sides of the main body of the photosensitive resistor. At the end, the photosensitive layer is composed of the following components:

[0046]

[0047]

[0048] In this embodiment, the rare earth chloride is a mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium chloride, and the rare earth chloride is composed of the following components:

[0049]

[0050] In this embodiment, the thickness of the photosensitive layer is 2 microns.

[0051] In this embodiment, the ceramic substrate is made of aluminum oxide with a purity of more than 93%.

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Abstract

The invention discloses a photoresistor and a manufacturing method thereof. The method is characterized by adopting rare-earth chloride to replace CuCl; adding the rare-earth chloride, the weight percentage of which is 0.1%, to photosensitive layer materials CdS, CdSe and CdCl2, wherein the rare-earth chloride is one or a mixture of two or more than two of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium chloride; and adjusting proportion of the three materials of CdS, CdSe and CdCl2, wherein the rare-earth chloride content is very small, so that the material cost of the photoresistor is not influenced, and through the combination of the rare-earth chloride and the three materials of CdS, CdSe and CdCl2, dark resistance of the photoresistor can be increased, and bright resistance of the photoresistor can be can be reduced. The advantages are that sensitivity of the photoresistor can be improved; the stability of the rare-earth chloride is relatively high, so that the photoresistor is not easy to change in the aging process, and reduction of other performance parameters of the photoresistor does not be caused; and since the stability of the photoresistor in the in the aging process is high, rejection rate is greatly reduced.

Description

Technical field [0001] The invention relates to a photosensitive resistor, in particular to a photosensitive resistor and a manufacturing method thereof. Background technique [0002] Photoresistors are mainly used in various photoelectric control systems, such as photoelectric automatic switch portals, automatic lighting systems, automatic water supply devices, automatic protection devices on machinery, photoelectric counters, and photoelectric tracking systems. [0003] The existing photosensitive resistor usually includes a ceramic substrate, a photosensitive layer and two electrodes. The photosensitive layer covers the surface of the ceramic substrate. The photosensitive layer and the ceramic substrate form the main body of the photosensitive resistor. The two electrodes are respectively installed at both ends of the main body of the photosensitive resistor. The resistance value of the photosensitive resistor measured after a certain period of time after being completely dark a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/08
CPCH01L31/0296H01L31/085
Inventor 鲁道邦朱永胜宋玉玲惠明海涛孙国良
Owner NANYANG NORMAL UNIV
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