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Nand Flash parameter reading method

A parameter reading and parameter technology, which is applied in the field of reading NandFlash parameters, can solve problems such as inability to operate different types of NandFlash correctly

Active Publication Date: 2016-01-27
TANGRAM MICROELECTRONICS TECH SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can solve the problem that a piece of solidified code cannot correctly operate different types of NandFlash

Method used

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Embodiment Construction

[0021] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0022] In order to facilitate the understanding of the embodiments of the present invention, further explanations will be given below with specific embodiments in conjunction with the accompanying drawings.

[0023] In view of the fact that the existing NandFlash parameters can only be specified during compilation or selected through the pin ...

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Abstract

The invention relates to a Nand Flash parameter reading method. The method includes the following steps that a Nand Flash reading command is sent, and a first section of Nand Flash parameters in multiple sections of Nand Flash parameters are read, wherein each section of Nand Flash parameters includes a first part of data and a second part of data; the first part of data are verified for the first time, and if verified to be corrected in the first time of verification, the first part of data continue to be verified for the second time; if the first part of data are verified to be corrected in the second time of verification, values of parameters in the first part of data are compared with values set by a program; if the values of the parameters in the first part of data and the values set by the program are the same, it is determined that Nand Flash parameter reading succeeds. Through the method, automatic identification of Nand Flash parameters is achieved without adding memorizers or increasing cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for reading NandFlash parameters. Background technique [0002] As a low-cost, large-capacity storage device, NandFlash is used more and more widely in embedded systems. Different models of NandFlash have different page sizes, block sizes, and free area sizes, and different NandFlashes have different ECC verification strengths. In NandFlash chips that do not support the ONFI (OpenNandFlashInterface) standard protocol, these data can only be passed through obtained from the data sheet provided by the manufacturer. [0003] In embedded applications that use NandFlash as a storage device, after the processor is reset, it will first execute a piece of code named ROMcode that is solidified inside the processor chip, read the code from NandFlash to the on-chip or off-chip RAM, and then Run the corresponding program. To correctly read the code from NandFlash, it is ne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/42
Inventor 谢长武卜弋天庹凌云刘方李烨
Owner TANGRAM MICROELECTRONICS TECH SHANGHAI CO LTD
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