High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy

Abstract

The invention discloses a high-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy. The device comprises an inner water jacket assembly, a gas inlet assembly and a mounting flange which are sequentially coaxially nested from inside to outside, wherein the gas inlet assembly comprises multiple layers of gas inlet rings and sealing rings which are coaxially nested in a spaced manner, the multiple layers of gas inlet rings are elongated layer by layer from outside to inside, a gas inlet is formed in the top end of each gas inlet ring, the tail end of each gas inlet ring is folded outwards in the radial direction to form a flared folded surface, the sealing rings are welded to the peripheries of the gas inlets and arranged on the outside of the mounting flange, the sealing rings are spaced and the sealing ring on the outermost layer and the mounting flange are also spaced. The device has the benefits as follows: welding seams formed between each sealing ring and the corresponding gas inlet ring are exposed out of the outer surface of the gas inlet device and are convenient to maintain; the sealing rings are arranged in a spaced manner, so that repair welding is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor material manufacturing equipment, in particular to a high-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy. Background technique [0002] As a potential third-generation wide-bandgap semiconductor material for making high-temperature, high-frequency, high-power and radiation-resistant devices, SiC has attracted people's attention. At present, the SiC epitaxy process is that the Si atoms produced after the cracking reaction of silane and propane at a high temperature of 1650 ° C are recombined with C atoms to form SiC. The high-temperature-resistant horizontal multilayer gas inlet device for SiC epitaxy in the existing SiC epitaxy equipment is placed in the center of the substrate tray, which includes the gas inlet path for the process gas and the cooling water path for cooling the process gas to prevent its pre-reaction , there are many welding seams at the junc...

AI Technical Summary

Problems solved by technology

The high-temperature-resistant horizontal multilayer gas inlet device for SiC epitaxy in the existing SiC epitaxy equipment is placed in the center of the substrate tray, which includes the gas inlet path for the process gas and the cooling water path for cooling the process gas to prevent its pre-reaction , there are many welding seams at the junction of the cooling water path, the air inlet air path and the two. Under the high temperature condition of 1650°C, the high temperature resistant horizontal multilayer air inlet device for SiC epitaxy with multiple weld seams has the following deficiencies: (1) The welds on the cooling water path are prone to cracking at high temperatures, which will cause cooling water or water molecules to enter the process chamber, causing serious consequences such as equipment damage and even explosions in the process chamber; (2) Many welds are surrounded inside the device, If the inner layer weld leaks, it cannot be detected and repaired

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