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Method and apparatus for uniformly metallization on substrate

A metallization, substrate technology, applied in electrical components, electrolysis process, semiconductor/solid-state device manufacturing, etc., can solve problems such as different, uneven application of acoustic energy, and difficulty in adjusting parallelism and spacing.

Active Publication Date: 2015-12-23
ACM RES SHANGHAI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, the energy intensity of the wave is different at its nodes and non-nodes, resulting in that the acoustic wave energy is not uniformly applied to the substrate
Furthermore, it is difficult to control the formation of standing waves throughout the process of depositing metal thin films because it is difficult to adjust the parallelism and spacing between two planes.

Method used

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  • Method and apparatus for uniformly metallization on substrate
  • Method and apparatus for uniformly metallization on substrate
  • Method and apparatus for uniformly metallization on substrate

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Embodiment Construction

[0031] According to an embodiment of the present invention, an ultrasonic / mega-sonic device is used, and the ultrasonic / mega-sonic device used in the present invention is disclosed in patent US6,391,166 and WO / 2009 / 055992.

[0032] figure 1 A schematic diagram of the distribution of sound energy intensity in the front area of ​​the strip-shaped ultrasonic device is disclosed. The graph was obtained through hydrophone testing, where dark areas represent high sound energy intensities and bright areas represent low sound energy intensities. The distribution of acoustic energy intensity from the center of the ultrasonic device to the edge of the ultrasonic device is non-uniform, wherein there are several dark fringes with higher acoustic energy intensities. The distribution of sound energy intensity along the direction D perpendicular to the surface of the ultrasonic device is also uneven, wherein the sound energy intensity is higher in areas close to the ultrasonic device and lo...

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Abstract

The present invention relates to applying at least one ultra / mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

Description

technical field [0001] The invention relates to a device and a method for metallizing a substrate in an electrolytic solution. In particular, it involves the application of at least one ultrasonic / megasonic device in the metallization device, combined with a dynamic control mechanism to control the movement of the substrate to make the sound waves uniformly pass through the substrate surface, so as to obtain a high uniformity of metal film deposition and a deposition rate much higher than Existing film growth rate in electrolyte. Background technique [0002] In ULSI (Ultra Large Scale Integration) circuit fabrication, conductive lines are formed by depositing a layer of metal, usually copper, on a substrate with a thin conductive layer, usually in an electrolyte environment. This deposition process can fill, for example, a through-hole structure, a trench structure or a hybrid structure of the two structures, and cover a film layer on the surface of the substrate. The uni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/607C25D5/20
CPCC25D5/18C25D17/001C25D17/06C25D5/20C25D3/02
Inventor 王晖陈福平王希
Owner ACM RES SHANGHAI
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