Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CMOS gate voltage bootstrapping switch circuit

A switching circuit and gate voltage bootstrap technology, applied in the field of CMOS gate voltage bootstrap switching circuit, can solve problems such as ignoring the linearity problem, and achieve the effect of reducing the input parasitic capacitance and reducing the drop

Active Publication Date: 2015-12-23
SOUTHEAST UNIV
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing bootstrap technology improves the nonlinear distortion caused by the change of the switching gate-source voltage Vgs, but it ignores the linearity problem caused by the change of Vth caused by the body effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CMOS gate voltage bootstrapping switch circuit
  • CMOS gate voltage bootstrapping switch circuit
  • CMOS gate voltage bootstrapping switch circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0034] figure 2 It is a circuit diagram of a CMOS gate voltage bootstrap switch circuit according to an embodiment of the present invention. refer to figure 2 , the gate voltage bootstrap switch circuit in this example includes a charge pump circuit, a gate charge and discharge circuit, an input buffer circuit and a switch circuit, the charge pump circuit is connected to the gate charge and discharge circuit, the gate charge and discharge circuit is connected to the switch circuit, and the gate An input buffer circuit is connected between the charge and discharge circuit and the switch circuit. Wherein, the charge pump circuit is driven by the input buffer circuit, because the input buffer circuit isolates the input signal at the input terminal from the charge pump circuit, thereby greatly reducing the input parasitic capacitance. The charge pump circuit and the gate charging and discharging circuit constitute a gate voltage bootstrap loop, which is used to generate a gate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a CMOS gate voltage bootstrapping switch circuit which comprises a charge pump circuit, a gate electrode charge and discharge circuit, an input buffering circuit and a switch circuit. The charge pump circuit is electrically connected to the gate electrode charge and discharge circuit. The gate electrode charge and discharge circuit is electrically connected to the switch circuit. The input buffering circuit is arranged between the gate electrode charge and discharge circuit and the switch circuit. According to the invention, the input buffering circuit is adopted to drive a charge pump circuit. Such a design greatly reduces the input of parasitic capacitance because the input buffering circuit separates the inputted signal from an inputting end and the charge pump circuit. Beyond that, the CMOS gate voltage bootstrapping circuit provided by the invention overcomes the problems that a conventional CMOS gate voltage bootstrapping circuit only achieves constant gate-source voltage Vgs of a switching tube and omits a substrate bias effect to cause the non-linearity introduced by Vth change .

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a CMOS gate voltage bootstrap switch circuit. Background technique [0002] With the rapid development of semiconductor technology, high-speed and high-precision analog-to-digital converters have been widely used in digital communications, military radar and other fields. Pipelined ADC, as one of the mainstream ADC products at present, can well take into account the requirements of speed and precision. In the pipeline analog-to-digital converter, the digital-to-analog converter (MDAC) with multiplication is an important part, and its performance determines the performance of the entire pipeline analog-to-digital converter. With the shrinking of the process size, the switch circuit used in MDAC will undoubtedly face new challenges. For the switching circuit in the digital-to-analog converter with multiplication, it requires low on-resistance, small area, high precisi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687H03M1/12
Inventor 胡晨姚芹孙杰陈超吴建辉李红
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products