IGBT health state monitoring method based on leakage current of collector electrode

Abstract

The invention provides an IGBT health state monitoring method based on a leakage current of a collector electrode. The method comprises the steps that after installation and debugging and before usage, an IGBT module passing detection is utilized for testing the leakage current of the collector electrode under certain conditions, and the leakage current of the collector electrode is recorded as an initial value; the leakage current of the collector electrode of the IGBT device is tested regularly and is recorded as a testing value; the testing value is taken into a collector electrode leakage current health state monitoring method simulation model, the fatigued aging process and the residual life of the IGBT device can be calculated, and the purpose of monitoring the IGBT health state is achieved; and when the deviation degree of the leakage current of the collector electrode reaches a failure standard, the device is determined to be invalid, at the moment, the IGBT device needs to be changed, and the above steps are repeated. By original state calibration and real-time monitoring, the health state and the reliability of the IGBT device in different life stages can be effectively estimated.

Description

technical field [0001] The invention belongs to the technical field of reliability of power electronic devices and devices, and in particular relates to a method for monitoring the health state of an IGBT based on collector leakage current. Background technique [0002] Insulated gate bipolar transistor (IGBT) is the core component of power electronic devices, and its reliability has become the most important factor in determining the safe operation of the entire device. Overseas research institutes have investigated more than 200 products from 80 companies and found that nearly 40% of power electronic device failures are caused by component failures. With the wide application of IGBT devices in military and economic fields such as aerospace, electromagnetic launch, maritime transportation, rail transit, and new energy power generation, the power level is getting higher and higher, the working environment is harsher, and the use conditions are increasingly harsh. increasing...

AI Technical Summary

Problems solved by technology

During the deposition and alloying process of Al, and when the device is subjected to a strong current impact (this strong current can come from various electromagnetic interference, electrostatic discharge, super power aging and life experiments, etc.), the Al-Si interface occurs Si to Al Physical processes such as solid-state dissolution of Si, electromigration of Si in Al grain boundaries, thermoelectromigration of Al in Si, etc., lead to penetration pits in the Si contact window, which may cause the increase of the barrier height in light cases, or increase the leakage current in severe cases. PN junction short circuit

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