Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bonding structure and forming method thereof

A bonding structure and bonding layer technology, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of poor mechanical strength of the bonding layer

Active Publication Date: 2015-11-25
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The present application aims to provide a bonding structure and its forming method to solve the problem of poor mechanical strength of the bonding layer of the bonding structure in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bonding structure and forming method thereof
  • Bonding structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0033] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.

[0034] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ..."...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The application discloses a bonding structure and a forming method thereof. The bonding structure comprises a bonding layer. The bonding layer comprises a bonding metal and a grain refinement material. The grain refinement material is used for refining the bonding metal. The application is aimed at solving the problem that the mechanical strength of a bonding layer is poor in terms of the prior art, and the bonding layer of the invention comprises the bonding metal and the grain refinement material for refining bonding metal grains. In this way, grain refinement of the bonding metal is achieved, the mechanical strength of the bonding layer is improved, the structure of the bonding layer is more stable, and the bonding layer of the bonding structure is effectively prevented from loosening and falling.

Description

technical field [0001] The present application relates to the technical field of integrated circuits, and in particular, relates to a bonding structure and a forming method thereof. Background technique [0002] Wafer bonding technology is to make two pieces of homogeneous or heterogeneous materials with clean surface and atomic level roughness after surface cleaning and activation treatment, without using any adhesive substances, and directly bond them into one under certain conditions. Van der Waals forces, molecular forces, and even atomic forces combined. This wafer bonding technology is realized by using a bonding structure, which can be understood as a connection element. . [0003] Wafer bonding technology has great advantages. The interface obtained by this technology has the advantages of firmness, smoothness and optical transparency. This interface is of great significance for the innovation of optical devices. [0004] In the existing technology, such as figur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/60
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com