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A passive high-temperature pressure sensor based on the principle of microwave scattering and its preparation method

A pressure sensor, microwave scattering technology, applied in the direction of measuring fluid pressure, measuring fluid pressure through electromagnetic components, instruments, etc., to achieve the effect of good stability, high sensitivity, and reasonable structural design

Active Publication Date: 2018-01-05
ZHONGBEI UNIV
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Problems solved by technology

[0003] The present invention proposes a passive high-temperature pressure sensor based on the principle of microwave scattering measurement and its preparation method in order to solve the problems of the above-mentioned different defects in the actual application of existing pressure measurement methods in harsh environments such as high temperature and high pressure.

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  • A passive high-temperature pressure sensor based on the principle of microwave scattering and its preparation method
  • A passive high-temperature pressure sensor based on the principle of microwave scattering and its preparation method
  • A passive high-temperature pressure sensor based on the principle of microwave scattering and its preparation method

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Embodiment Construction

[0022] A passive high-temperature pressure sensor based on the principle of microwave scattering measurement, such as figure 1 , 2 As shown, it includes a cylindrical base structure 1 and a cylindrical sealing diaphragm 2 arranged from bottom to top, such as Figure 5 , 6 As shown, a concave cylindrical cavity 3 with an upward opening is set in the base structure, and four symmetrically raised inner cylinders 4 are arranged in the concave cylindrical cavity to reduce the center frequency of the concave cavity, and the height of the inner cylinder is lower than that of the concave cylindrical The upper end surface of the cavity, the upper end surface of the base structure, the inner surface of the concave cylindrical cavity, and the upper surface of the inner cylinder are sputtered with a metal layer 5, and the metal layer is a silver metal layer with a thickness of 0.1-0.2um; image 3 As shown, the upper surface of the sealing diaphragm is sputtered with a metal paste patter...

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Abstract

The invention relates to the technical field of pressure sensors, specifically a passive high-temperature pressure sensor based on the principle of microwave scattering measurement and its preparation method, which solves the problems of many defects in existing pressure measurement methods in harsh environments such as high temperatures, including cylindrical bases and The sealing diaphragm is provided with a concave cylindrical cavity in the base, and four symmetrically distributed inner cylinders are arranged in the center of the concave cylindrical cavity. The height of the inner cylinders is lower than the upper end surface of the concave cylindrical cavity. The upper surface of the inner cylinder is sputtered with a metal layer; the upper surface of the sealing diaphragm is sputtered with a microstrip antenna, the lower surface is sputtered with a ground plane, and a rectangular coupling gap is opened on the lower surface; the base and the sealing diaphragm are bonded to form a microwave resonant cavity. The design is reasonable, the sensitivity is high, the stability is good, and it can work for a long time in harsh environments such as high temperature and high pressure, and realizes a passive high-temperature ceramic pressure sensor based on wireless measurement of microwave scattering.

Description

technical field [0001] The invention relates to the technical field of pressure sensors, in particular to a passive high-temperature pressure sensor based on the principle of microwave scattering measurement and a preparation method thereof. Background technique [0002] At present, pressure measurement under high temperature and high pressure mainly includes measurement methods based on piezoresistive effect, piezoelectric effect and LC resonance. However, the application of the above measurement methods at high temperatures has testing shortcomings, such as piezoresistive devices based on semiconductor doping technology to form a PN junction bridge, and the PN junction electrons will leak when measured at high temperatures; piezoresistive devices based on the piezoelectric effect Electrical materials can only be used within the Curie temperature; and these two measurement methods require direct lead wires in a high-temperature environment, which also brings the difficulty ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L9/00
Inventor 谭秋林熊继军魏坦勇陈晓勇罗涛伍国柱张文栋
Owner ZHONGBEI UNIV
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