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Short pulse fiber laser for LTPS crystallization

A fiber laser, pulsed technology, used in laser welding equipment, semiconductor/solid-state device manufacturing, manufacturing tools, etc., can solve the problems of high total processing cost, destructiveness, and high cost

Active Publication Date: 2015-09-30
NLIGHT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Excimer lasers are complex and expensive as production equipment
Even the best excimer lasers still tend to have extremely limited lifetimes, and replacing the excimer laser cavity and its associated optical components can be disruptive and expensive
While satisfactory results can be obtained, the total processing cost associated with ELA remains high

Method used

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  • Short pulse fiber laser for LTPS crystallization
  • Short pulse fiber laser for LTPS crystallization
  • Short pulse fiber laser for LTPS crystallization

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Embodiment Construction

[0026] The following disclosure is presented in the context of representative embodiments, which should not be construed as limiting in any way. This disclosure relates to all novel and non-obvious features and aspects of the various disclosed embodiments, alone and in various combinations and subcombinations with each other. The disclosed methods, devices and systems are not limited to any particular aspect or feature or combination thereof, nor do the disclosed embodiments require that any one or more particular advantages should exist or problems should be solved.

[0027] Although operations of disclosed methods are described in a particular order for ease of presentation, it is understood that this manner of description encompasses rearrangements of operations unless the specific ordering is required by specific language set forth below. For example, in some cases, operations described sequentially may be rearranged or performed concurrently. Furthermore, for the sake of...

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Abstract

Laser pulses from pulsed fiber lasers are directed to an amorphous silicon layer to produce a polysilicon layer comprising a disordered arrangement of crystalline regions by repeated melting and recrystallization. Laser pulse durations of about 0.5 to 5 ns at wavelength range between about 500 nm and 1000 nm, at repetition rates of 10 kHz to 10 MHz can be used. Line beam intensity uniformity can be improved by spectrally broadening the laser pulses by Raman scattering in a multimode fiber or by applying varying phase delays to different portions of a beam formed with the laser pulses to reduce beam coherence.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Application No. 61 / 747,805, filed December 31, 2012, which is hereby incorporated by reference into this specification in its entirety. technical field [0003] The present disclosure relates to methods and apparatus for forming silicon layers of thin film transistors. Background technique [0004] Various types of silicon substrates are used in many applications including solar cells and display devices. So-called amorphous silicon (a-Si) is used in high resolution liquid crystal displays to provide the active layer in which thin film transistors can be defined. Amorphous silicon can be deposited in thin films using PECVD. Low temperature polysilicon (LTPS) can be produced by exposing the a-Si layer to high intensity ultraviolet laser pulses that rapidly melt the deposited a-Si layer without heating the underlying substrate. The a-Si layer then crystallizes into gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268
CPCH01L21/02686B23K26/0042H01L21/02532B23K26/0635H01L21/268B23K26/0006B23K26/0624B23K2103/56
Inventor R·J·马丁森S·R·卡尔森K·格罗斯
Owner NLIGHT INC
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