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Tungsten film forming method and semiconductor device manufacturing method

A film-forming method and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, coatings, etc., can solve problems such as difficulty in coping with high step coverage, and achieve the effect of avoiding complicated procedures

Active Publication Date: 2015-09-30
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The physical vapor deposition (PVD) method has been used in the past as the film-forming process of tungsten. However, since tungsten is a high-melting-point metal and the PVD method is difficult to cope with the high step coverage required by the miniaturization of equipment in recent years, it is not necessary to Formation of W with a high melting point and the chemical vapor deposition (CVD) method that can sufficiently cope with the miniaturization of devices

Method used

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  • Tungsten film forming method and semiconductor device manufacturing method
  • Tungsten film forming method and semiconductor device manufacturing method
  • Tungsten film forming method and semiconductor device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0111] First, the relationship between the film thickness of the tungsten film and the resistivity of the film is obtained. Here, use figure 1 Tungsten films with various film thicknesses were formed by ALD on a TiN film formed on the surface of a silicon wafer, and the resistivity of each film was measured. The condition at this time is fixed as: Carrier N 2 Gas flow: 500sccm (WCl 6 Flow: 10sccm), H 2 Gas flow: 4500sccm, WCl 6 Time to supply one step: 1.5sec, H 2 The time for one gas supply step: 3 sec, the time for one purge step: 5 sec, the number of cycles: 200 to 1000 times, and the temperature and pressure conditions are the following three conditions of condition A, condition B and condition C.

[0112] [Condition A] Temperature: 500°C, Pressure: 30Torr

[0113] [Condition B] Temperature: 500°C, Pressure: 20Torr

[0114] [Condition C] Temperature: 430°C, Pressure: 30Torr

[0115] exist Figure 6 Shows the results of the above experiments. As shown in the figur...

experiment example 2

[0117] Here, a TiN film was formed as a base film in a hole with a top diameter of 180 nm and an aspect ratio of 60, and a tungsten film was directly formed thereon by ALD to fill the hole. The conditions at this time are: use figure 1 film forming device, wafer temperature: 500°C, chamber pressure: 30Torr, carrier N 2 Gas flow: 500sccm (WCl 6 Flow: 10sccm), H 2 Gas flow: 4500sccm, WCl 6 Time to supply one step: 1.5sec, H 2 Time for one gas supply step: 3 sec, time for one purge step: 5 sec, number of cycles: 500 times.

[0118] exist Figure 7 A SEM photograph of the cross section at this time is shown in . Such as Figure 7 As shown, it was confirmed that the nucleation film was not applied, and a tungsten film was obtained with a good step coverage to the bottom of the hole with a top diameter of 180 nm and an aspect ratio of 60 by one-step film formation.

experiment example 3

[0120] Here, only H is used as reducing gas 2 gas and in H 2 Add NH to the gas 3 The film-forming properties in gas were evaluated. use figure 1 Tungsten film is formed at various temperatures by the ALD method on the TiN film formed on the surface of the silicon wafer. As a condition at this time, for the carrier N 2 Gas flow: 500sccm (WCl 6 Flow: 10sccm), WCl 6 Time for one gas supply step: 1.5sec, H 2 Time for one gas supply step: 3 sec, time for one purge step: 5 sec, number of cycles: 50 to 300 times, when only H is used as reducing gas 2 When the gas is 2000sccm, and in H 2 Add NH to gas 2000sccm 3 When the gas is 25 to 1500 sccm, the tungsten film is formed at a wafer temperature (table surface temperature): 250 to 500°C.

[0121] exist Figure 8 In indicates that only H is used as reducing gas 2 The relationship between the wafer temperature and the film formation rate (per 1 cycle) in the gas, in Figure 9 denoted as reducing gas in H 2 Add NH to the gas...

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Abstract

A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.

Description

technical field [0001] The invention relates to a film forming method of a tungsten film and a manufacturing method of a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor equipment, as a material for filling contact holes formed on a semiconductor wafer (hereinafter, simply referred to as a wafer) as an object to be processed, a via hole between wirings, a wiring material, or a mutual As a material of the diffusion barrier layer, etc., tungsten is used. [0003] The physical vapor deposition (PVD) method has been used in the past as the film-forming process of tungsten. However, since tungsten is a high-melting-point metal and the PVD method is difficult to cope with the high step coverage required by the miniaturization of equipment in recent years, it is not necessary to W is formed with a high melting point and a chemical vapor deposition (CVD) method that can sufficiently cope with the miniaturization of devices. [0004]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/14H01L21/768
CPCH01L21/32051C23C16/46C23C16/08C23C16/455H01L21/76879C23C16/14C23C16/45525H01L21/28556H01L21/28562H01L21/76877
Inventor 堀田隼史饗场康前川浩治
Owner TOKYO ELECTRON LTD
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