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Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film

A low-emissivity and selective technology, applied in the field of infrared stealth films and their preparation, can solve problems such as low emissivity, and achieve the effects of small residual thermal stress, good thermal matching, and not easy to fall off.

Active Publication Date: 2015-08-26
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is still relatively rare to conduct research on the control of spectral emission radiation in the infrared band, and even to apply materials with spectral selectivity and low emissivity properties to the field of infrared stealth.

Method used

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  • Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film
  • Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film
  • Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film

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Embodiment 1

[0036] a kind of like figure 1 Shown is an infrared stealth film with spectral selectivity and low emissivity. The infrared stealth film is a film that can regulate the emitted radiation of the spectrum, and its substrate is sapphire. The infrared stealth film is a multi-layer stacked structure, and the multi-layer stacked structure includes a periodic stacked structure composed of layers of high-refractive-index materials and layers of low-refractive-index materials; the periodic stacked structure includes a composite stacked first A multilayer film structure and a second multilayer film structure, the central wavelength of the first multilayer film structure is λ 1 , the central wavelength of the second multilayer film structure is λ 2 , and λ 1 = 4.0 μm, λ 2 = 11.0 μm. The layers are connected by chemical bonding.

[0037] In the infrared stealth film with spectral selectivity and low emissivity of this embodiment, the high refractive index material layer is a Si mater...

Embodiment 2

[0045] An infrared stealth film with spectral selectivity and low emissivity according to the present invention, the infrared stealth film is a film capable of regulating the emitted radiation of the spectrum, and its substrate is sapphire. The infrared stealth film is a multi-layer stacked structure, and the multi-layer stacked structure includes a periodic stacked structure composed of layers of high-refractive-index materials and layers of low-refractive-index materials; the periodic stacked structure includes a composite stacked first A multilayer film structure and a second multilayer film structure, the central wavelength of the first multilayer film structure is λ 1 , the central wavelength of the second multilayer film structure is λ 2 , and λ 1 = 4.0 μm, λ 2 = 11.0 μm. The layers are connected by chemical bonding.

[0046] In the infrared stealth film with spectral selectivity and low emissivity of this embodiment, the high refractive index material layer is a Si ...

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Abstract

The invention relates to an infrared stealth thin film with spectral selectivity and low emission rate. The infrared stealth thin film is of a multi-layer superimposed structure; the multi-layer superimposed structure contains a periodically-laminated structure which is formed by alternately superimposing high-refractive index material layers and low-refractive index material layers; and the periodically-laminated structure includes a first multilayer structure and a second multilayer structure of which the center wavelengths are lambda 1 and lambda 2 respectively, wherein the first multilayer structure and the second multilayer structure are superimposed in a complex manner, the lambda 1 satisfies the expression that 3.0 microns<=lambda 1<= 5.0 microns, and the lambda 2 satisfies the expression that 8.0 microns<=lambda 2<=14.0 microns. The preparation method of the infrared stealth thin film includes the steps that: a substrate is cleaned; a Si thin film is plated on the substrate by means of sputtering and through adopting a radio frequency magnetron sputtering method, and a ZnS thin film is plated on the high-refractive index material layer by means of sputtering and through adopting a radio frequency magnetron sputtering method; the previous steps are repeated for a plurality of periods, and alternate control on designed thicknesses is utilized in combination, and therefore, the infrared stealth thin film with spectral selectivity and low emission rate can be obtained. The preparation method of the infrared stealth thin film of the invention has the advantages of simple preparation process, high repeatability, low equipment requirements, excellent product performance and favorable application effect.

Description

technical field [0001] The invention belongs to the technical field of functional thin film materials, and in particular relates to an infrared stealth thin film with spectral selectivity and low emission performance and a preparation method thereof. Background technique [0002] With the continuous development of stealth technology, infrared stealth, as one of the important means, has received more and more attention. The concept of infrared stealth refers to eliminating or reducing the difference in the radiation characteristics of the two atmospheric windows (3.0μm~5.0μm, 8.0μm~14.0μm) in the middle and far infrared bands between the target and the background. [0003] At present, in infrared stealth technology, there are two commonly used means: changing the infrared radiation band of the target or reducing its infrared radiation output, and the latter is the most common technical means. [0004] By the Stefan-Boltzmann law: M=εσT 4 , the degree of infrared radiation e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/10B32B19/00C23C14/35
CPCC23C14/35G02B1/10G02B5/208
Inventor 李俊生程海峰彭亮郑文伟周永江刘海韬张朝阳
Owner NAT UNIV OF DEFENSE TECH
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