GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device
A two-dimensional electronic gas, LED device technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of LED luminous efficiency attenuation, restricted development, restricted development, etc., and achieve the effect of improving lateral expansion efficiency and luminous efficiency.
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[0036] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.
[0037] ginseng figure 1 Shown is a schematic structural diagram of a GaN-based LED device in the prior art, including from bottom to top: a sapphire substrate, a GaN nucleation layer, a GaN buffer layer, an undoped GaN layer, an N-type GaN layer, and a multi-quantum well light-emitting layer , a P-type GaN layer and a P-type GaN contac...
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