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GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device

A two-dimensional electronic gas, LED device technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of LED luminous efficiency attenuation, restricted development, restricted development, etc., and achieve the effect of improving lateral expansion efficiency and luminous efficiency.

Inactive Publication Date: 2015-07-15
FOCUS LIGHTINGS SCI & TECH
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

With the increasing application scope of LED in the lighting and backlight market year by year, the application demand of medium and high power devices has increased significantly. However, LEDs have the problem of attenuation of luminous efficiency under high current injection, which limits the application of high power and high brightness LEDs to a certain extent. Development, also restricts the development of LED in the field of general lighting

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  • GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device
  • GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device

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Embodiment Construction

[0036] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0037] ginseng figure 1 Shown is a schematic structural diagram of a GaN-based LED device in the prior art, including from bottom to top: a sapphire substrate, a GaN nucleation layer, a GaN buffer layer, an undoped GaN layer, an N-type GaN layer, and a multi-quantum well light-emitting layer , a P-type GaN layer and a P-type GaN contac...

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Abstract

The invention discloses a GaN-based LED (Light-Emitting Diode) device with a two-dimensional electron gas structure, and a preparation method for the GaN-based LED device. The LED device comprises a substrate, a GaN nucleating layer, a GaN buffer layer, a non-doped GaN layer, an N-type GaN layer, the two-dimensional electron gas structure, a multi-quantum well luminous layer and a P-type GaN layer. According to the LED device, the two-dimensional electron gas structure is an electron emission layer formed by alternately stacking a plurality of pairs of lightly-doped n-GaN layers / AlN layers / heavily-doped n+GaN layers from bottom to top, the overflow of electrons into a non-quantum well area for nonradiative recombination with electron holes under a heavy-current injection condition can be effectively inhibited, and in addition, by two-dimensional electron gas, the transverse spreading efficiency of the electrons can be improved to improve the luminous efficiency of LEDs under the heavy-current injection condition.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a GaN-based LED device with a two-dimensional electron gas structure and a preparation method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component capable of emitting light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. And the use is also used as indicator lights, display panels, etc. from the beginning; with the continuous advancement of technology, light-emitting diodes have been widely used in displays, TV lighting decoration and lighting. [0003] LED is a solid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/14H01L33/00
CPCH01L33/06H01L33/0066H01L33/0075H01L33/14H01L33/32
Inventor 刘恒山冯猛蔡睿彦陈立人
Owner FOCUS LIGHTINGS SCI & TECH
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