Large-signal model method for germanium-silicon heterojunction transistor

Abstract

The invention discloses a large-signal model method for a germanium-silicon heterojunction transistor. The large-signal model method includes the steps that a Gummel-Poon model is established; a large-signal model composed of the Gummel-Poon model, second base resistance, second collector resistance, second emitter resistance, second base collecting capacitance and second base transmitting capacitance is established; parasitic resistance of electrodes of the transistor is tested, acquired third base resistance is the sum of corresponding first base resistance and the corresponding second base resistance, acquired third collector resistance is the sum of corresponding first collector resistance and the corresponding second collector resistance, and acquired third emitter resistance is the sum of corresponding first emitter resistance and the corresponding second emitter resistance. An S parameter test is conducted on the transistor, third base collecting resistance and third base transmitting capacitance are calculated, the third base collecting resistance is the sum of corresponding first base collecting capacitance and the corresponding second base collecting capacitance, and the third base transmitting resistance is the sum of corresponding first base transmitting resistance and the corresponding second base transmitting resistance. The large-signal model is simulated, a large-signal test is conducted on the transistor, and parameter fitting of the large-signal model is conducted. The simulation accuracy of the model can be improved.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing method, in particular to a large-signal model method for germanium-silicon heterojunction transistors Background technique [0002] The accuracy of the large-signal model of the triode has always been a common problem in the industry. The Gummel-poon model is an industry-standard triode model, which can better characterize the DC, AC, and small-signal characteristics of the triode. However, for germanium-silicon heterojunction transistors , due to its special structure, it is essentially different from ordinary triodes, and its simulation error will be relatively large under large signals. Contents of the invention [0003] The technical problem to be solved by the invention is to provide a large-signal model method for germanium-silicon heterojunction transistors, which can improve the simulation accuracy of the model. [0004] In order to solve the above-mentioned technical ...

AI Technical Summary

Problems solved by technology

[0002] The accuracy of the large-signal model of the triode has always been a common problem in the industry. The Gummel-poon model is an industry-standard triode model, which can better characterize the DC, AC, and small-signal characteristics of the triode. However, for germanium-silicon heterojunction transistors , due to its special structure, it is essentially different from ordinary triodes, and its simulation error will be relatively large under large signals

Images