A test structure for measuring silicide resistance

A technology for testing structures and silicides, which is applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc. It can solve problems such as the inability to use silicide resistance measurement, and achieve accurate measurement results

Active Publication Date: 2018-05-08
SEMICON MFG INT (SHANGHAI) CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the traditional measurement method for measuring silicide resistance can no longer be applied to the measurement of silicide resistance in the post-silicide process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A test structure for measuring silicide resistance
  • A test structure for measuring silicide resistance
  • A test structure for measuring silicide resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention. For a thorough understanding of the present invention, a detailed description will be set forth in the following description to illustrate the method of the present invention. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0026] It should be noted that the terms used herein are for the purpose of describing s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a test structure for measuring silicide resistance, according to a test structure for measuring silicide resistance proposed by the present invention, the test structure for measuring silicide resistance includes two test structures, by calculating Parallel silicide layer on the active area and the resistance value of the strip-shaped metal test piece and calculate the strip-shaped metal test piece on the isolation structure to indirectly measure the resistance value of the silicide layer, providing accurate silicide in the gate-last process Test structure for layer resistance measurement.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a test structure for measuring silicide resistance applied in a silicide-last process. Background technique [0002] The main device in integrated circuits (ICs), especially VLSIs, is metal-oxide-semiconductor field-effect transistors (MOSs). High performance and more functional integrated circuits require greater component density, and the size, size, and space of individual components, between components, or by themselves need to be further reduced. For CMOS with more advanced technology nodes, high-k dielectric layer / metal gate last (high-k and metal gate last) technology has been widely used in CMOS devices to avoid damage to devices caused by high-temperature processing processes . [0003] A post-silicide (Silicide Last) process needs to be implemented after the implementation of the high-K / metal gate process last, because the post-silicide process can introduce a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L23/544
Inventor 林艺辉
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap