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Low-interface-state device and manufacture method thereof

A manufacturing method and interface state technology, which are used in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., to achieve the effect of reducing interface states

Inactive Publication Date: 2015-05-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The high interface state between III-nitride materials and their passivation layer or gate dielectric has become a bottleneck restricting the application of III-nitride electronic devices

Method used

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  • Low-interface-state device and manufacture method thereof
  • Low-interface-state device and manufacture method thereof
  • Low-interface-state device and manufacture method thereof

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Embodiment Construction

[0018] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0019] A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, sizes, and relative positions can be...

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Abstract

The invention discloses a manufacture method of a low-interface-state device. The manufacture method comprises the following steps: carrying out remote plasma surface treatment on group III nitride layers on a pair of substrates; transferring the treated substrates to a deposition chamber via an anaerobic transmission system; and depositing on the treated substrates in the deposition chamber. The deposition can be low-pressure chemical vapor deposition (LPCVD). The interface state between a surface medium and a group III nitride material can be obviously reduced by integrating low-damage remote plasma surface treatment and the LPCVD technique.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a device with a low interface state and a manufacturing method thereof. Background technique [0002] The high interface state between the III-nitride material and its passivation layer or gate dielectric has become a bottleneck restricting the application of the III-nitride electronic device. Studies have confirmed that the interface oxidation of III-nitrides during the process is the source of high interface states. On the other hand, low-pressure chemical vapor deposition (LPCVD) technology is a very mature thin-film dielectric preparation technology in the CMOS process. How to reduce the interface state so that high-quality films can be formed using LPCVD and other deposition processes has become a key technology to promote the industrialization of III-nitride power electronics. Contents of the invention [0003] The object of the present invention is a...

Claims

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Application Information

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IPC IPC(8): H01L21/265H01L21/365
CPCH01L21/02271C23C16/0245C23C16/303H01L21/02164H01L21/02315H01L21/0254H01L21/02664
Inventor 刘新宇黄森王鑫华魏珂王文武李俊峰赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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