A chemical-mechanical polishing solution and applications thereof

Abstract

The invention discloses a chemical-mechanical polishing solution used for polishing barrier layers. The polishing solution comprises abrasive particles, oxysalt, a complexing agent, an organic dispersing agent, a corrosion inhibitor, a pH conditioning agent and deionized water. The polishing solution is characterized in that: the polishing solution has adjustable TEOS and Cu polishing speeds under a low cerium oxide solid content, and the polishing solution shows high Ta and Ti polishing and removing speeds especially under the synergistic effect of the oxysalt.

Description

technical field [0001] The invention discloses a chemical mechanical polishing fluid for polishing barrier layer and application thereof. Background technique [0002] With the development of integrated circuits towards high integration, copper has gradually replaced aluminum as interconnect materials, mainly because copper has relatively low resistivity, high anti-electromobility and short RC delay time, which can effectively improve chip performance. The yield rate is reduced, the number of layers of wiring is reduced, and the processing time is shortened. But copper is easily soluble in many dielectric materials, so a diffusion barrier layer is required to prevent copper from diffusing into the underlying dielectric material. Conventional barrier layer materials include titanium, titanium nitride, tantalum, tantalum nitride, etc. [0003] Chemical mechanical planarization (CMP) technology is currently the most reliable and low-cost method for manufacturing flat substrate...

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Problems solved by technology

Patent 200710172711.7 discloses a polishing solution that can improve excessive corrosion, protrusions and sawtooth phenomena on the edge during barrier layer polishing, but the polishing solution desc

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