Non-destructive readout ferroelectric memory and manufacturing method and operation method thereof

Abstract

The invention belongs to the technical field of ferroelectric memory, in particular to a non-destructive readout ferroelectric memory and a manufacturing method and an operating method thereof. The non-destructive readout ferroelectric memory comprises a first electrode layer, a second electrode layer and a ferroelectric film layer, wherein the ferroelectric film layer is arranged between the first electrode layer and the second electrode layer; a gap for partitioning the first electrode layer into at least two parts is formed in the first electrode layer; the polarization direction of the electric domain of the ferroelectric film layer is not basically vertical or basically parallel to the normal direction of the first electrode layer; when a read signal in a certain direction is biased between two adjacent parts between which the gap is kept in the first electrode layer, the electric domain of the part of ferroelectric film layer corresponding to the gap is reversed locally to construct a domain wall conducting channel. By adopting the ferroelectric memory, a non-destructive current readout way can be realized. The non-destructive readout ferroelectric memory is suitable for high-density application, is easy to manufacture, and is low in cost.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, in particular to a non-destructive readout ferroelectric memory, in particular to a ferroelectric memory for non-destructive readout based on electrodes with gaps and the preparation method and operation of the ferroelectric memory method. Background technique [0002] FRAM (Ferroelectric Random Access Memory) uses two different polarization orientations of ferroelectric domains (or "electric domains") in the electric field as logic information ("0" or "1") to store data Non-volatile memory (Non-volatile Memory), which may also be called "ferroelectric memory". [0003] The storage medium layer of ferroelectric memory is a ferroelectric thin film layer with reversible (or "flip") ferroelectric domains. At present, the fastest speed of domain inversion that can be measured in the laboratory can reach 0.2 ns, it can actually be faster. Generally, the domain inversion speed determin...

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Problems solved by technology

[0007] Therefore, the destructive readout (DRO) ferroelectric memory currently commercially used is mainly read out by charge integration to the ferroelectric capacitor. As summarized above, it has the disadvantage of destructive readout. Rewriting data, which is accompanied by a large number of erasing and rewriting operations, reduces the reliability of the device and affects the data reading speed; and, this reading principle limits the scaling down of the ferroelectric capacitor C, and the storage Low density, for example, the maximum ferroelectric memory in commercial application is only 8MB

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