Film deposition device and method

Abstract

The invention discloses a film deposition device, which comprises grounding electrode boards, a plurality of excitation electrode boards and heating resistance wires. Each grounding electrode board carries a base board; the plurality of excitation electrode boards are located at both sides of the grounding electrode boards; and the heating resistance wires are located on the surfaces of the excitation electrode boards. Reaction gas is ionized into plasma through control of the excitation electrode boards on either side of the grounding electrode boards, and thus films are deposited on the surfaces of the base boards corresponding to the excitation electrode boards. According to the invention, heating and deposition processes are integrated to be carried out in a single chamber for film deposition of the multiple base boards, so that the device and the technical process are greatly simplified and the high-yield and low-cost production is realized; and the films can be selectively deposited on the two sides of the base boards, so that the deposition process is flexible and manageable.

Description

technical field [0001] The invention relates to the technical field of manufacturing heterojunction solar cells, in particular to a thin film deposition device capable of mass production and selectively depositing thin films on both sides of a substrate. Background technique [0002] While people are pursuing an efficient and convenient lifestyle, the demand for renewable green energy such as solar energy is also increasing. Among them, the development and utilization of solar cells have received great attention, especially the low-cost and high-efficiency heterojunction solar cells are favored. Heterojunction solar cells combine the characteristics of amorphous silicon and single crystal silicon, and have the characteristics of low-temperature preparation process, high conversion efficiency, and excellent high-temperature characteristics. The structural feature of the heterojunction solar cell is that the N-type monocrystalline silicon wafer is sandwiched between the P-i t...

AI Technical Summary

Problems solved by technology

After the deposition of one side of the film layer is completed, these two kinds of equipment have to be moved out of the reaction chamber and turned over, and then moved into another reaction chamber to deposit the other side of the film layer, which is easy to be polluted, and the equipment is extremely complicated and expensive.

Therefore, neither device is suitable for low-cost, high-volume production of heterojunction solar cells.

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