Substrate heating device and process chamber

Abstract

The present invention relates to a process chamber which includes a substrate heating device. The substrate heating device of the process chamber according to one embodiment of the present invention has a boat in which a plurality of substrates are stacked apart from each other, and a chamber housing in which the boat is positioned in an inner space for process gas to flow between the substrates which are stacked apart from each other on the inner side wall, and the present invention includes a first heating body which generates heat in the lower portion of the boat to heat the substrate. Moreover, the boat comprises an upper plate, a lower plate, a plurality of support bars connecting the upper plate with the lower plate, and a plurality of substrate-receiving grooves formed on the side walls of the support bars.

Description

technical field [0001] The present invention relates to a processing chamber having a substrate heating device, and more specifically to a substrate heating device for heating a substrate during a process and a processing chamber to which the substrate heating device is applied. Background technique [0002] As the scale of semiconductor devices is gradually reduced, the demand for ultra-thin films is increasing, and the problem of step coverage becomes more and more serious when the size of the connection hole is reduced. [0003] In general, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), chemical In the case of a vapor deposition apparatus or an atomic layer deposition apparatus, the process gas can be injected by a shower head method or a nozzle method. [0004] figure 1 It is a schematic diagram showing the configuration of an atomic layer thin film deposition apparatus by a showerhead method. [0005] The atomic layer thin film deposition...

AI Technical Summary

Problems solved by technology

[0006] On the other hand, in the case of chemical vapor deposition (CVD) or atomic layer deposition (ALD), there is a problem that the mass production capacity of processed substrates is low

This is because even if multiple substrates are placed on the plane of the substrate support frame for chemical vapor deposition or atomic layer thin film deposition, the number of substrates placed on the substrate frame is limited, and thus there is a limitation that multiple substrates cannot be processed at the same time.

Images