LED chip structure and preparation method thereof

Abstract

The invention discloses an LED chip structure and a preparation method thereof. The LED chip structure comprises a substrate, and an epitaxial layer positioned on the substrate; the epitaxial layer comprises a first area layer, a quantum well active layer and a second area layer. The LED chip structure further comprises a slot which extends from the second area layer to the second area layer or extending into the first area layer, a first electrode which is formed in the slot and in contact with the first area layer, and a second electrode which is formed on the second area layer. According to the LED chip structure, the area of an etching are of an LED chip can be reduced, the effective lighting area of the LED chip can be increased, and as a result, the lighting efficiency is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to the technical field of power semiconductor devices, in particular to a light emitting diode chip structure and a preparation method thereof. Background technique [0002] Light Emitting Diodes (LED for short) is a semiconductor electronic component that can emit light. With the advantages of no pollution sources of mercury and other toxic substances, with the promotion of light-emitting diodes, its structure has become more and more, and its brightness has become brighter and brighter. [0003] figure 1 A front top view of a lateral structure of a light emitting diode chip in the prior art is shown. The two electrodes of the light-emitting diode chip with a lateral structure are on the same side of the light-emitting diode chip, the P electrode 16 is in the P-type gallium nitride region of the light-emitting diode epitaxial layer, and the N electrode 15 is distributed in...

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Problems solved by technology

[0004] figure 2 shows the lateral structure of light emitting diodes in the prior art along figure 1 Medium AA 1 Sectional view of direction, from figure 2 It can be found that when making the N electrode 15, the quantum well active layer 13 and the p-type gallium nitride layer 14 of the entire N-type region are etched away, and the N-type region is etched in a large area, and this region will not be able to emit light, resulting in The light-emitting effective area is reduced, thus reducing the brightness and luminous efficiency of the LED

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