Method and structure for improving phosphorus concentration uniformity of doped polycrystalline or noncrystalline silicon chips

Abstract

The invention discloses a method for improving the phosphorus concentration uniformity of doped polycrystalline or noncrystalline silicon chips. According to the method, a furnace tube is adopted for growth, phosphorane is introduced through three nozzle pipelines, and the top ends of the nozzle pipelines are arranged at the bottom, the middle and the top of a crystal boat respectively; gas is emitted from the top of the first nozzle pipeline; a plurality of lateral gas outlets are formed in each of the second and third nozzle pipelines at intervals; the diameters of the lateral gas outlets of each pipeline are gradually increased in a direction from the bottom end to the top end and adjusted by testing the phosphorus concentration of the monitored silicon chips at the fixed monitoring positions of the crystal boat; the positions of the lateral gas outlets are adjusted by testing a phosphorus concentration curve along the whole crystal boat. The invention further discloses a structure for improving the phosphorus concentration uniformity of the doped polycrystalline or noncrystalline silicon chips. According to the method and the structure, the phosphorus concentration uniformity of the silicon chips can be improved and the production cost can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for improving the uniformity of doped polycrystalline or amorphous silicon phosphorus concentration between sheets, and the invention also relates to a method for improving the doped polycrystalline or amorphous silicon phosphorus concentration sheet Uniform structure. Background technique [0002] Doped polysilicon / amorphous silicon, that is, the phosphorus concentration of the polysilicon or amorphous silicon process directly affects the gate resistance (Rg) parameter of the product, which is a very critical and controllable process parameter. Existing polysilicon or amorphous silicon is generally grown by a furnace tube process and simultaneously doped. In the growth process of polysilicon or amorphous silicon, silane is generally used as the silicon source, and phosphine is used as the doping source of phosphorus. Due to the equipment se...

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Problems solved by technology

Therefore, in the prior art, in order to ensure that the phosphorus concentration of the product on the entire wafer boat or the entire batch of products is still within the product demand range, the general method is to greatly increase the flow rate of the reaction gas silane, but this method will cause multiple particles and cost (cost) ) becomes a higher production problem

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