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Structure for Reducing Black Lines on the Back of Back Passivated Solar Cells

A solar cell and backside technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of reducing the battery, affecting the contact resistance of the back passivated battery, affecting the performance of the back passivated battery, etc., and achieving the effect of reducing the window area

Active Publication Date: 2017-11-10
WUXI SUNTECH POWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In actual implementation, if the window area of ​​the back passivated solar cell is large, the area of ​​the back passivation area of ​​the cell will be reduced, thereby reducing the photoelectric conversion efficiency of the cell; while the window area is small, the aluminum paste and silicon cannot form If the ohmic contact is very good, there will be "voids" that will affect the contact resistance of the back passivated battery. If the "voids" of the back passivated battery are continuously generated at the adjacent window positions and have a certain length, this type of battery Under the detection equipment of photoluminescence or electroluminescence, there will be a strip-shaped black line area on the back, which will affect the performance of the back passivation battery

Method used

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  • Structure for Reducing Black Lines on the Back of Back Passivated Solar Cells
  • Structure for Reducing Black Lines on the Back of Back Passivated Solar Cells
  • Structure for Reducing Black Lines on the Back of Back Passivated Solar Cells

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0022] Such as figure 1 Shown: In order to effectively reduce the black line on the back of the back passivated solar cell, improve the series resistance of the cell, improve the conversion efficiency of the cell, and effectively improve the image brightness of the cell under photoluminescence or electroluminescence detection equipment, The present invention includes a battery substrate 1; the back of the battery substrate 1 is covered with a passivation layer 2, and a conductive layer 3 is printed on the passivation layer 2, and the conductive layer 3 passes through the window on the passivation layer 2 The holes 5 are in ohmic contact with the battery substrate 1 .

[0023] Specifically, the conductive layer 3 is printed on the passivation layer 2 , since the passivation layer 2 is provided with a number of openings 5 ​​, the ohmic contact between the conduc...

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PUM

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Abstract

The invention relates to a photovoltaic structure, in particular to a structure for reducing black lines on the back face of a back-passivated solar cell. According to the technical scheme, the structure for reducing the black lines on the back face of the back-passivated solar cell comprises a cell substrate, the back face of the cell substrate is covered with a passivation layer, and a conductive layer is printed on the passivation layer and is in ohmic contact with the cell substrate through window holes in the passivation layer. The structure is compact, the black lines on the back face of the back-passivated solar cell can be effectively reduced, the series resistance of the cell can be improved, and the conversion efficiency of the cell can be improved; meanwhile, the brightness degree of an image of the cell under a photoluminescence or electroluminescence detection device can be effectively improved, and the structure is safe and reliable.

Description

technical field [0001] The invention relates to a photovoltaic structure, in particular to a structure for reducing black lines on the back of a passivated solar cell. Background technique [0002] Rear passivation solar cells are the development direction of crystalline silicon solar cells. By coating a passivation film on the back of solar cells, the minority carrier lifetime can be improved, thereby improving cell efficiency. In actual implementation, if the window area of ​​the back passivated solar cell is large, the area of ​​the back passivation area of ​​the cell will be reduced, thereby reducing the photoelectric conversion efficiency of the cell; while the window area is small, the aluminum paste and silicon cannot form Good ohmic contact, there will be "voids", which will affect the contact resistance of the back passivated battery. If the "voids" of the back passivated battery are continuously generated at the adjacent window positions and have a certain length, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216
CPCH01L31/02167Y02E10/50
Inventor 严婷婷陆红艳陈如龙黄海涛
Owner WUXI SUNTECH POWER CO LTD
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