High temperature apparatus and method for silicon carbide growth

Abstract

The invention relates to a high-temperature device and method for silicon carbide growth. The device comprises a housing, a growth chamber, a gas outlet pipe, a temperature detector, a growth source gas inlet pipe, a rotatable loading disc, a gas distribution disc, a heater, a thermal insulation layer and a smoke exhaust pipe, wherein the housing adopts a cylindrical structure; the growth chamber adopts a cylindrical structure and is located in the middle of the housing; the gas outlet pipe and the temperature detector are fixed at the top of the growth chamber; the growth source gas inlet pipe is located on the side wall in the growth chamber and extends to the bottom of the growth chamber; the rotatable loading disc is connected to the middle of the growth chamber through a shaft rod from top to bottom; the gas distribution disc is fixed at the bottom of the growth chamber; the heater is located below the growth chamber and in the housing, and a burning chamber is formed between the heater and the growth chamber; the thermal insulation layer surrounds the growth chamber; one end of the smoke exhaust pipe is fixed on the thermal insulation layer and communicated with the burning chamber, and the other end of the smoke exhaust pipe extends out of a room via the housing. The device and the method provided by the invention can avoid high electricity consumption, increase the production efficiency and lower the energy consumption.

Description

Technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-temperature device and method for silicon carbide growth, which can be used for the growth of silicon carbide bulk single crystals and the rapid growth of homogeneous thick film epitaxial materials of silicon carbide. Background technique [0002] Silicon carbide (SiC) is a third-generation semiconductor material. Because of its wide band gap, it can reach 3.2eV, which is 3 times that of Si. Therefore, it has a high critical breakdown electric field (10 times that of Si) and high current carrying capacity. In addition, it also has the characteristics of high thermal conductivity (3 times of Si). Therefore, it is used in high temperature, high frequency, high power power electronics and optoelectronic devices in the military and aerospace fields. It has superior application value, and is expected to gradually replace the existing silicon-based high-power devices and becom...

AI Technical Summary

Problems solved by technology

The heating method currently used is mainly electric heating, such as resistance heating or radio frequency induction heating. Affected by the heating method, efficiency and maintenance time, it will cause a large amount of power consumption and increase the cost of silicon carbide semiconductors.

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