GaAs double-faced thin-film solar cell

Abstract

The invention discloses a GaAs double-faced thin-film solar cell comprising a cell unit or an array composed of a plurality of cell units. Each cell unit comprises a back electrode layer, a device layer and a grid electrode layer. Each grid electrode comprises a first grid structure, each back electrode comprises a second grid structure, a first antireflection film layer is arranged between the device layer and the back electrode layer, and a second antireflection film layer is arranged between the device layer and the grid electrode layer. Each cell unit is in the shape of a regular hexagon or rectangle. The GaAs double-faced thin-film solar cell has the advantages that double-faced light interception of the GaAs thin-film solar cell is realized, light loss is reduced, and photoelectric conversion efficiency is higher; small-gap and even seamless splicing of regular-hexagonal or rectangular solar cells can be achieved to form the cell array, so that energy density of the solar array in unit area is increased, output power of the solar array in unit area is improved, and production cost is reduced remarkably.

Description

technical field [0001] The invention relates to a solar cell, in particular to a GaAs double-sided thin-film solar cell, which belongs to the technical field of solar cell manufacturing. Background technique [0002] With the rapid development of human industrial civilization, fossil fuels have become scarce resources and will be exhausted as time goes by. Moreover, during the combustion of fossil fuels, a large amount of poisonous gases and solid suspended particles will be produced, causing serious damage to the environment. Therefore, The development of new energy sources with environmental protection value has become an urgent matter. Solar energy is an inexhaustible and inexhaustible source of energy, and has the characteristics of not being restricted by region and realizing the modularization of photovoltaic systems, so it has become the most popular research object. [0003] As the hope of human energy in the future, scientists are devoting themselves to the develop...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of increasing the incident light and reducing the reflected light, it is generally considered to install an anti-reflection film, which reduces the reflection of the solar cell on the incident light within a certain wavelength range through the setting of the anti-reflection film, but because the anti-reflection film itself is not conductive, Therefore, the anti-reflection film cannot be placed between the metal electrode and the device layer in the solar cell manufacturing process without sintering process.

Usually, the design and manufacture of electrodes and anti-reflection film structures of GaAs double-sided thin-film batteries are theoretically independent but will affect each other in actual processes, especially in more complex electrode designs, the height and density of electrodes (spacing ) will affect the actual thickness of the anti-reflection coating, thus directly affecting the anti-reflection effect of the anti-reflection coating

[0007] In addition, in the prior art, the GaAs substrates are all circular sheets, and the shape of the GaAs battery layer on it is the same as that of the substrate, which is also circular, and the adjacent solar cell arrays composed of circular thin film solar cells The gap between the batteries is large, resulting in low energy density of the battery array, which is not suitable for satellites, airships and other fields that require high energy density and limited space; if the GaAs battery layer is patterned after stripping, the GaAs thin film solar cell Very thin and brittle, cutting or cutting it is easy to damage the battery structure, resulting in reduced efficiency and high cost loss

Images