Method for preparing cobaltous oxide electrode with nanosheet structure
A cobalt oxide and nanosheet technology, applied in the manufacture of cobalt oxide/cobalt hydroxide, hybrid capacitor electrodes, hybrid/electric double layer capacitors, etc., can solve the problem of low specific capacitance, improve the charging and discharging rate, and facilitate industrial production. , the effect of broad application prospects
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0018] Embodiment 1: A method for preparing a nanosheet structure cobalt oxide electrode described in this embodiment is specifically carried out according to the following steps:
[0019] 1. Put the Si substrate in an acetone solution and ultrasonically clean it for 10-20 minutes, and then use magnetron sputtering equipment to prepare a Co coating on the Si substrate to obtain a Co-coated silicon wafer;
[0020] 2. Place the Co-coated silicon wafer in the plasma-enhanced chemical vapor deposition vacuum device, evacuate to a pressure below 5Pa, pass in argon gas, adjust the flow rate of the argon gas to 10sccm-50sccm, and adjust the plasma-enhanced chemical vapor deposition vacuum The pressure in the device is 100Pa~1000Pa, and under the pressure of 100Pa~1000Pa and argon atmosphere, the temperature is raised to 500℃~800℃ within 25min;
[0021] 3. Introduce oxygen, adjust the gas flow rate of oxygen to 10sccm, adjust the gas flow rate of argon to 50sccm~90sccm, adjust the pre...
specific Embodiment approach 2
[0027] Embodiment 2: This embodiment differs from Embodiment 1 in that: in Step 1, a Co coating with a thickness of 10 nm˜1000 nm is prepared on the Si substrate by using a magnetron sputtering device. Others are the same as in the first embodiment.
specific Embodiment approach 3
[0028] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that in step 1, a Co coating with a thickness of 100 nm is prepared on the Si substrate by using a magnetron sputtering device. Others are the same as in the first or second embodiment.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com