Equivalent work function adjusting method of metal grid electrode

Abstract

Disclosed is a method for adjusting an equivalent work function of a metal gate electrode. The method comprises: forming a metal gate electrode configuration at least comprising a metal work function layer; and performing plasma processing on at least one layer of the metal gate electrode configuration. In this way, the equivalent work function of the metal gate electrode can be adjusted in a relatively flexible manner.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a method for adjusting the equivalent work function of a metal gate electrode. Background technique [0002] With the continuous shrinking of the transistor feature size of large-scale integrated circuits, the high-K gate dielectric / metal gate structure gradually replaces the traditional silicon dioxide / polysilicon gate structure. In order to meet the multi-threshold requirements of the device, a double metal gate structure design is generally adopted. That is, NMOSFET and PMOSFET use metallic materials with different work functions, so that the equivalent work functions of their metal gate electrodes are respectively close to the conduction band edge (~4.2eV) and valence band edge (~5.1eV) of the silicon substrate. [0003] It is hoped that the equivalent work function of the metal gate electrode can be adjusted more effectively. In particular, in the gate-last ...

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Problems solved by technology

In particular, in the gate-last process, there are filling problems of high-K gate dielectric / metal gate structure and selection restrictions of metal gate materials, etc.

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