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Method for Adjusting Equivalent Work Function of Metal Gate Electrode

A metal gate and work function technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effect of multi-threshold adjustment

Active Publication Date: 2018-04-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, in the gate-last process, there are filling problems of high-K gate dielectric / metal gate structure and selection restrictions of metal gate materials, etc.

Method used

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  • Method for Adjusting Equivalent Work Function of Metal Gate Electrode
  • Method for Adjusting Equivalent Work Function of Metal Gate Electrode
  • Method for Adjusting Equivalent Work Function of Metal Gate Electrode

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Embodiment Construction

[0016] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0017] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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Abstract

A method for adjusting an effective work function of a metal gate. The method includes forming a metal gate arrangement comprising at least a metal work function layer, and performing plasma treatment on at least one layer in the metal gate arrangement. In this way, it is possible to adjust the effective work function of the metal gate in a relatively flexible way.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a method for adjusting the equivalent work function of a metal gate electrode. Background technique [0002] With the continuous shrinking of the transistor feature size of large-scale integrated circuits, the high-K gate dielectric / metal gate structure gradually replaces the traditional silicon dioxide / polysilicon gate structure. In order to meet the multi-threshold requirements of the device, a double metal gate structure design is generally adopted. That is, NMOSFET and PMOSFET use metallic materials with different work functions, so that the equivalent work functions of their metal gate electrodes are respectively close to the conduction band edge (~4.2eV) and valence band edge (~5.1eV) of the silicon substrate. [0003] It is hoped that the equivalent work function of the metal gate electrode can be adjusted more effectively. In particular, in the gate-last ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/265
CPCH01L21/28088H01L21/321H01L21/823842H01L29/517H01L29/66545
Inventor 杨红王文武闫江罗维春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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