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Vertical cavity surface emitting semiconductor laser

A vertical cavity surface emission and semiconductor technology, applied in the field of lasers, can solve the problems of poor stability and low VCSEL output power, and achieve the effects of increased loss, high power, high stability, single-mode output, and simple manufacturing process

Active Publication Date: 2017-07-25
吉光半导体科技有限公司
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Problems solved by technology

[0005] The purpose of the present invention is to provide a vertical cavity surface emitting semiconductor laser in order to solve the technical problems of low VCSEL output power and poor stability in the prior art

Method used

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  • Vertical cavity surface emitting semiconductor laser
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  • Vertical cavity surface emitting semiconductor laser

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preparation example Construction

[0031] The preparation method of the above-mentioned vertical cavity surface emitting semiconductor laser comprises the following steps:

[0032] Step 1: Cleaning the epitaxial wafer, performing photolithography and development on the p-side of the cleaned epitaxial wafer for the first time, dry-etching the p-side, and the P-type DBR mesa 4 appears, and the etching depth just reaches the top of the active region 8;

[0033] Wherein, the epitaxial wafer can be obtained by means known to those skilled in the art, and generally adopts commercial purchase;

[0034] Step 2: Perform oxidation measurement on the P-type DBR mesa 4 to obtain an oxidation-limited layer 6 with oxidation holes 7;

[0035] Step 3, thinning and polishing the substrate 9, and then growing an N-face electrode 10 on the surface of the substrate 9;

[0036]Step 4: On the upper surface of the P-type DBR4, grow a transparent insulating dielectric material with an optical thickness that is an odd multiple of a qu...

Embodiment 1

[0040] Such as figure 2 As shown, the vertical cavity surface emitting semiconductor laser includes a P-type DBR4, an active region 8, an N-type DBR5, a substrate 9 and an N-surface electrode 10 arranged in sequence from top to bottom, and a circular oxidation hole is arranged in the P-type DBR4 The oxidation limiting layer 6 of 7 also includes a P-face electrode 1, a transparent conductive film 2 and an annular insulating dielectric film 3, the lower surface of the annular insulating dielectric film 2 is fixed on the upper surface of the P-type DBR4, and blocks the edge of the light exit hole, transparent The conductive thin film 3 is fixed on the upper surface of the annular insulating dielectric film 3 and the exposed P-type DBR4, and blocks the light exit hole, and the P-surface electrode 1 is fixed on the edge of the upper surface of the transparent conductive thin film 3 . The P surface electrode 1 and the annular insulating dielectric film 2 are all in a ring structure...

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Abstract

The invention discloses a vertical cavity surface emitting semiconductor laser, which belongs to the technical field of lasers. The technical problems of low single-mode power output by the VCSEL and poor single-mode stability in the prior art are solved. The laser includes a P-type DBR, an active region, an N-type DBR, a substrate, and an N-face electrode that are closely arranged from top to bottom, and an oxidation-limited layer with oxidation holes is arranged in the P-type DBR; the laser also includes a P A surface electrode, a transparent conductive film and an annular insulating dielectric film, the annular insulating dielectric film is fixed on the upper surface of the P-type DBR, and blocks the edge of the light hole, the transparent conductive film is fixed on the upper surface of the P-type DBR, and covers the annular insulating film The dielectric film and cover the light exit hole; the P surface electrode is fixed on the edge of the upper surface of the transparent conductive film and does not block the light exit hole. The laser can increase the output power of the fundamental mode and improve the reliability.

Description

technical field [0001] The invention relates to a vertical cavity surface emitting semiconductor laser (VCSEL), belonging to the technical field of lasers. Background technique [0002] Due to its good laser stability, coherence and beam quality, single-mode lasers are widely used in communications, printing, pump sources, gas detection and analysis, computer optical mice and other fields. With the further development of these fields, it is required that VCSEL can realize high-power single-mode output. It is widely used in communication, printing, pump source, gas detection and analysis, computer optical mouse and other fields. [0003] In the prior art, there are usually two types of VCSELs to achieve single-mode output: the first way is to increase the mode gain difference so that the gain of the fundamental mode is higher than the gain of the high-order mode, and then through a higher single-mode rejection ratio, the single-mode output is realized. Fundamental mode sing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/028
Inventor 宁永强李秀山王立军贾鹏刘云秦莉张星
Owner 吉光半导体科技有限公司
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