Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polyimide coating and baking method

A polyimide coating and baking method technology, applied in the field of MEMS, can solve the problems of irregular distribution, scrapped chips, affecting imaging quality, etc., to reduce the problem of bubble defects, improve product yield and imaging quality, reduce The effect of bubble defects

Active Publication Date: 2016-06-29
北方广微科技有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The distribution of bubble defects on the surface of the wafer is irregular. Once formed in the pixel area, because the bubble area loses the support of PI, fractures will be formed in the subsequent process, and bad spots will be formed directly, which will affect the imaging quality. Continuous distribution will even cause a film to be scrapped directly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polyimide coating and baking method
  • Polyimide coating and baking method
  • Polyimide coating and baking method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] Embodiments of the present invention are described in detail below.

[0049] Examples of the described embodiments are shown in the drawings, wherein like or similar reference numerals designate like or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a low-cost, low-defect-density high-viscosity polyimide coating and baking method, which comprises the following steps in sequence: coating a tackifier on the surface of a wafer; Carry out the first baking to the wafer of sticky agent; Carry out the first cooling to the wafer of described first baking; Coating polyimide on the wafer surface after described first cooling; To described coating The wafer with polyimide is subjected to the second baking; the second baked wafer is subjected to the second cooling; the second cooled wafer is subjected to ultraviolet baking, and the ultraviolet baking The mode of co-heating with vacuum suction cup and deep ultraviolet lamp is adopted. The embodiment of the present invention solves the problem of bubble defects caused by the high viscosity of PI glue, thereby improving the product yield and imaging quality.

Description

technical field [0001] The invention relates to the technical field of MEMS, in particular to a polyimide coating and baking method with low cost and low defect density. Background technique [0002] MEMS (Micro Electro Mechanical System) is an advanced manufacturing technology platform. It is developed on the basis of semiconductor manufacturing technology. MEMS technology adopts a series of existing technologies and materials such as photolithography, corrosion, and thin film in semiconductor technology. Infrared sensors with superior performance can be manufactured using advanced MEMS micromachining technology. Today, infrared sensors are used more and more widely, such as non-contact rapid measurement of body temperature in medicine, which is of great significance in the need to measure the temperature of a large number of people; in addition, it is also used in scientific research and military, such as Infrared spectrometer, missile guidance, thermal imaging, laser d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B05D1/38B05D3/02B05D3/00B05C11/02
Inventor 高江雷述宇
Owner 北方广微科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com