Method for measuring internal quantum efficiency and internal loss of laser

Abstract

The invention provides a method for measuring the internal quantum efficiency and the internal loss of a laser through changing the effective reflectivity with an external optical feedback device. The method comprises the following steps: S1: an external optical feedback device is arranged on a laser optical path; S2: a cavity surface of the laser and a mirror surface of the external optical feedback device are equivalent to an equivalent cavity surface, and through change of the reflectivity of the external optical feedback device, the feedback intensity is adjusted and the output power of the laser is changed; S3: the current - power relationships of the laser at different feedback intensities are measured and a plurality of I - P curves are obtained; S4: the external differential quantum efficiency of each feedback intensity is calculated from the I - P curve; and S5: the internal quantum efficiency and the internal loss of the laser are obtained through fitting on the basis of the functional relationship between the external differential quantum efficiency and the reflectivity of the external optical feedback device. The method is characterized by needing only one laser, so that the method eliminates discrete errors brought by multi-laser measurement. Meanwhile, the method is convenient and fast with a low cost and high reliability.

Description

technical field [0001] The invention belongs to the fields of semiconductor optoelectronic technology and optical engineering, and relates to a method for measuring the internal quantum efficiency and internal loss of a laser. Background technique [0002] Since the semiconductor laser was born in 1962, the performance of the device has been rapidly improved, and it has been widely used in many fields, such as optical fiber communication, laser processing, laser medical treatment, spectroscopy, etc. From the perspective of market sales volume, the sales volume of semiconductor lasers is far greater than the sum of sales volumes of other types of lasers. In the development process of semiconductor lasers, the research and improvement of its waveguide structure and active region is the key to improving the performance of semiconductor lasers (“High Power SemiconductorLasers for Deep Space Communications,” TDA Progress Report42-63, Jet Propulsion Laboratory, Pasadena, Calif. ,...

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for measuring the internal quantum efficiency and internal loss of lasers, which is used to solve the problem of complex operation and large errors in the measurement methods in the prior art, and the cost and time also consume more problems

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