Axial pneumatic driving planet rotation apparatus

Abstract

The invention relates to an axial pneumatic driving planet rotation apparatus. The apparatus comprises a rotation disc driving a substrate to rotate, the bottom surface of the rotation disc is provided with a hollow shaft provided with an air hole therein, and the center in the rotation disc is provided with a main air hole connected with the air hole of the hollow shaft; the top surface of the rotation disc is provided with a plurality of planet disc grooves arranged along the circumference, planet discs are arranged in the planet disc grooves, the center of the bottom surface of each of the planet discs is provided with a planet disc rotating shaft, the bottom end of the planet disc rotating shaft is arranged in the rotation disc, and the planet discs can rotate around the planet disc rotating shafts; and the periphery of the main air hole is provided with subsidiary air holes extending to a position below the planet disc grooves, and the bottom surface of each of the planet discs is provided with a plurality of inclined grooves arranged along the circumferential direction. A gas enters from a central shaft due to the rotation of the rotation disc, and each of the planet discs rotate on its axis under pneumatic driving, so the planet discs rotate around the hollow shaft with the rotation disc and also rotate around its rotating shaft, that is, planet motion is realized.

Description

technical field [0001] The invention relates to semiconductor material manufacturing equipment, and further refers to a substrate planetary rotation motion device used in MOCVD and SiC epitaxy equipment, so as to make the deposited film on the surface of the substrate more uniform. Background technique [0002] GaN and SiC materials, as the third-generation semiconductor materials, have attracted people's attention. With the deepening of device research and development, GaN and SiC thin films are widely used in LEDs and power electronic devices, and the preparation of GaN and SiC thin films has become more and more important. The preparation method of GaN and SiC films is commonly used chemical vapor deposition method, which is a process in which several different gaseous compounds are passed into the vicinity of the substrate, and the gaseous compounds are decomposed and recombined at high temperature to form new solid substances. For example, GaN is in NH 3 and TMGa at 1...

AI Technical Summary

Problems solved by technology

Conventional mechanical transmission is impossible to make the substrate perform planetary motion at such a high temperature. Due to heat resistance of materials, thermal expansion, chemical corrosion, etc., the transmission will be unstable or even stuck.

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