Electrostatic discharge protective structure with bidirectional protective capacity

Abstract

An electrostatic discharge protective structure with the bidirectional protective capacity comprises a P-type substrate, an N-type well region, a first P-type heavily doped region, a second P-type heavily doped region, a first N-type heavily doped region, a second N-type heavily doped region, a third N-type heavily doped region, a fourth N-type heavily doped region, a first field oxide layer, a second field oxide layer, a third field oxide layer, a fourth field oxide layer and a grid oxide layer, a grid polycrystalline silicon layer, a first metal layer, a second metal layer, a third metal layer, a fourth metal layer, a fifth metal layer and a metal layer II. The electrostatic discharge protective structure has voltage resistance both in the positive and the negative directions. It is guaranteed that the structure will not affect the normal work of an internal circuit, the structure can provide electrostatic discharge current relief paths in the positive and the negative directions when meeting electrostatic discharge pulses, the purpose of electrostatic discharge protection is achieved, and the electrostatic discharge protective structure with the bidirectional protective capacity can be applied to an integrated circuit needing bidirectional electrostatic discharge protection.

Description

technical field [0001] The invention mainly relates to the field of electrostatic protection of integrated circuits, and more specifically relates to an electrostatic discharge protection structure with bidirectional protection capability. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, the size of metal oxide semiconductor devices has become smaller and smaller, entering the nanometer stage, in order to improve the performance and operation speed of integrated circuits and reduce the manufacturing cost of chips. With the continuous reduction of device size, some device reliability problems are brought along. In the study of the reliability of chips and devices, the harm caused by electrostatic discharge stress is particularly significant. Statistics show that more than 35% of integrated circuit failures are caused by electrostatic discharge, which causes considerable losses to the semiconductor industry every ye...

AI Technical Summary

Problems solved by technology

However, in some integrated circuits, the power supply voltage is not designed to work at a fixed value, and the voltage value will change positive and negative, so the ordinary electrostatic discharge protection structure not only cannot meet the protection requirements of this type of integrated circuit, it may It will also affect the normal operation of the integrated circuit

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