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Sn-doped CrO2 thin film and preparing method of Sn-doped CrO2 thin film

A thin film and substrate technology, applied in the field of Sn-doped CrO2 thin film and its preparation, can solve the problems of limited application range, poor thermal stability, cumbersome process, etc., and achieve the effect of wide application range, improved thermal stability and simple operation

Inactive Publication Date: 2014-08-27
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is not only cumbersome, but also carried out in an aqueous environment, and a modifier is added, resulting in the presence of impurities in the product and low magnetization
[0004]CrO2 Although it is a magnetic material with good magnetic properties and wide application, it is in a metastable state at room temperature and has poor thermal stability
Pure CrO2 begins to decompose into Cr2O3 above 400°C, which greatly limits its application range
The currently disclosed methods are only how to prepare high-purity CrO2 materials, and there is no specific preparation method for doping Sn elements into CrO2 materials to improve their thermal stability.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0023] Step 1, first 75 ~ 80 parts of quality CrO 3 Put into the quartz boat, put 20~25 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.

[0024] Step 2. Continuously feed O into the tube furnace at a flow rate of 230-250mL / min. 2 Under certain conditions, first heat the high temperature zone to 400°C~420°C, and then start the heat preservation. The end time of the heat preservation in the high temperature zone is the same as that of the low temperature zone in step 3.

[0025] Step 3. When the heat preservation is started in the high temperature area, start heating to the low temperature ...

Embodiment 2

[0029] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0030] Step 1, first 80 ~ 85 parts of quality CrO 3 Put it into the quartz boat, put 15~20 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.

[0031] Step 2. Continuously feed O into the tube furnace at a flow rate of 210-230mL / min 2 Under certain conditions, first heat the high temperature zone to 380°C~400°C, and then start the heat preservation. The end time of the heat preservation in the high temperature area is the same as the end time of the heat preservation in the low temperature area in step 3.

[0032] Step 3. When the heat preservation is started in the high temperature area, st...

Embodiment 3

[0036] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0037] Step 1, first 85 ~ 90 parts of quality CrO 3 Put it into the quartz boat, put 10~15 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.

[0038] Step 2. Continuously feed O into the tube furnace at a flow rate of 190-210mL / min 2 Under certain conditions, first heat the high temperature zone to 360°C~380°C, and then start the heat preservation. The end time of the heat preservation in the high temperature area is the same as that of the low temperature area in step 3.

[0039] Step 3: When the heat preservation is started in the high temperature area, start to heat the low temperature a...

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Abstract

The invention particularly relates to a Sn-doped CrO2 thin film and a preparing method of the Sn-doped CrO2 thin film. According to the technical scheme, 75-99.99 parts by weight of CrO3 is contained in a quartz boat, 0.01-25 parts by weight of SnCl2 is contained in another quartz boat, the two quartz boats are then placed in a low-temperature area of a double-temperature-area tubular furnace, and TiO2 single-crystal substrates are placed in a high-temperature area of the double-temperature-area tubular furnace; under the condition that O2 is continuously led in, the high-temperature area is firstly heated to 360 DEG C-420 DEG C, heat preservation is started, and the terminal time of heat preservation of the high-temperature area is the same as the terminal time of heat preservation of the low-temperature area; when the heat preservation of the high-temperature area is started, the low-temperature area is heated to 240 DEG C to 300 DEG C, and heat preservation is carried out for 2-8 hours; natural cooling is carried out, namely the Sn-doped CrO2 thin film is prepared on single-crystal substrates. The Sn-doped CrO2 thin film has the advantages that operation is simple, and industrial production can be rapidly carried out; by means of the Sn-doped CrO2 thin film prepared with the preparing method, under the condition that the magnetic property is not greatly changed, the heat stability is greatly improved, and the application scope is wide.

Description

Technical field [0001] The present invention belongs to CRO 2 Film technology field.Specifically involved a SN doped CRO 2 Film and preparation methods. Background technique [0002] In recent years, self -spin electronics has been one of the focus of international condensing state physics and materials, which has attracted widespread attention.As the simplest ferromagnetic semi -metal oxide CRO2 is a traditional magnetic record material, CRO 2 It was confirmed that it had nearly 100%spin polarization rate, and the centered temperature of CRO2 was as high as 396K.Therefore, CRO2 is considered one of the electrode materials for the development potential and ideal spin electronic devices. [0003] CRO 2 It is a sub -stable -state oxide under normal temperature, which leads to preparing CRO under normal temperature and normal pressure conditions 2 Unusual difficulty.CRO 2 The method is to decompose CRO under high temperature, high pressure, and water conditions 3 Or average oxides w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F41/22C23C16/40
Inventor 卢志红袁成丁轶郭芳戴明杰熊锐
Owner WUHAN UNIV OF SCI & TECH
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