Sn-doped CrO2 thin film and preparing method of Sn-doped CrO2 thin film
A thin film and substrate technology, applied in the field of Sn-doped CrO2 thin film and its preparation, can solve the problems of limited application range, poor thermal stability, cumbersome process, etc., and achieve the effect of wide application range, improved thermal stability and simple operation
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Embodiment 1
[0022] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:
[0023] Step 1, first 75 ~ 80 parts of quality CrO 3 Put into the quartz boat, put 20~25 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.
[0024] Step 2. Continuously feed O into the tube furnace at a flow rate of 230-250mL / min. 2 Under certain conditions, first heat the high temperature zone to 400°C~420°C, and then start the heat preservation. The end time of the heat preservation in the high temperature zone is the same as that of the low temperature zone in step 3.
[0025] Step 3. When the heat preservation is started in the high temperature area, start heating to the low temperature ...
Embodiment 2
[0029] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:
[0030] Step 1, first 80 ~ 85 parts of quality CrO 3 Put it into the quartz boat, put 15~20 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.
[0031] Step 2. Continuously feed O into the tube furnace at a flow rate of 210-230mL / min 2 Under certain conditions, first heat the high temperature zone to 380°C~400°C, and then start the heat preservation. The end time of the heat preservation in the high temperature area is the same as the end time of the heat preservation in the low temperature area in step 3.
[0032] Step 3. When the heat preservation is started in the high temperature area, st...
Embodiment 3
[0036] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:
[0037] Step 1, first 85 ~ 90 parts of quality CrO 3 Put it into the quartz boat, put 10~15 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.
[0038] Step 2. Continuously feed O into the tube furnace at a flow rate of 190-210mL / min 2 Under certain conditions, first heat the high temperature zone to 360°C~380°C, and then start the heat preservation. The end time of the heat preservation in the high temperature area is the same as that of the low temperature area in step 3.
[0039] Step 3: When the heat preservation is started in the high temperature area, start to heat the low temperature a...
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