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ZnO-based white light LED and preparing method thereof

A zinc oxide-based, white light technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult control and complex white light LED preparation process, and achieve the effect of simplifying the preparation process and not requiring high requirements

Inactive Publication Date: 2014-07-30
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to propose a zinc oxide-based white light LED and its preparation method to solve the problems of complex preparation process and difficult control in the preparation of white light LEDs in the prior art

Method used

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  • ZnO-based white light LED and preparing method thereof
  • ZnO-based white light LED and preparing method thereof
  • ZnO-based white light LED and preparing method thereof

Examples

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Embodiment 1

[0036] Embodiment 1: The oxygen pressure was adjusted to 0.6 Pa, and another n-ZnO layer sample was prepared according to the same method as above with other conditions. After the preparation is completed, the thickness of the sample is about 425nm, and then the electrodes are prepared on the p-GaN substrate and the n-ZnO layer by the same method as above. After the preparation is completed, the electrical properties of the two n-ZnO layers are compared and measured. The measurement results are as follows: the resistivity of the n-ZnO layer prepared under the condition of oxygen pressure of 2Pa is 1.3Ωcm, and the carrier concentration is 1.5x10 18 cm -3 , with a mobility of 3.7cm 2 / Vs, the resistivity of the n-ZnO layer prepared under the condition of oxygen pressure of 0.6Pa is 1.6Ωcm, and the carrier concentration is 5.0x10 17 cm -3 , with a mobility of 7.7cm 2 / Vs. The resistivity of the p-GaN substrate under both conditions is 3.7Ωcm, and the carrier concentration i...

Embodiment 2

[0038] Example 2: Preparation of n-ZnO / i-ZnO / p-GaN heterojunction light-emitting LED. Before growth, the vacuum chamber was pumped to 6 × 10 -4 Below Pa. Put the cleaned p-GaN substrate into the sample holder, mask the position of the electrode to be prepared on the substrate, then place the substrate on the sample holder of the vacuum chamber, adjust the distance between the target and the substrate to 85mm, Lower the shield over the substrate. Oxygen with a purity of 99.9999% was used as the growth gas, the oxygen flow rate was set to 30 sccm, and the vacuum valve was adjusted to control the pressure of the growth chamber so that the oxygen pressure was 8Pa. Set the growth temperature to 300°C, adjust the laser pulse energy to 300mJ, pulse frequency to 5Hz, start the laser to pre-ablate the target, remove the substrate baffle after 10 minutes, and start growing the ZnO layer on the p-GaN substrate. After 10 minutes of growth, a high-resistance I-layer ZnO layer (i-ZnO) wa...

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Abstract

The invention relates to the technical field of LEDs, in particular to a ZnO-based white light LED and a preparing method thereof. The method comprises the steps that high-purity oxygen is used as growth gas, an n-ZnO layer grows on a p-GaN substrate which has the characteristic of blue electroluminescence, and a p-GaN / n-ZnO heterojunction is formed; in the preparing process of the heterojunction, by controlling the pressure intensity of the high-purity oxygen and the growth temperature, a Ga, Zn and O mixed interface layer is formed on the interface of the heterojunction, the interface layer obtains the characteristic of yellow electroluminescence, and light from the interface layer and light emitted by the p-GaN substrate can be mixed to generate white light; electrodes are prepared on the p-GaN substrate and the n-ZnO layer respectively, and the preparation of the ZnO-based white light LED is achieved. Compared with the prior art, the LED preparation is achieved in one time in the growing process, the preparing process of the LED is effectively simplified, the requirement for growing materials is not high, and the method is a practicable method for preparing the ZnO-based heterojunction white light LED, and meets the development direction of the semiconductor illumination light source technology.

Description

technical field [0001] The invention relates to the technical field of light-emitting LEDs, in particular to a zinc oxide-based white light LED and a preparation method thereof. Background technique [0002] Semiconductor lighting has significant advantages such as energy saving, environmental protection, small size, long service life, and easy maintenance. It can be used in various color and white lighting fields, and is an ideal solid-state cold light source to replace incandescent and fluorescent lamps. The semiconductor lighting source is a light-emitting LED with a semiconductor material as the core. Among them, the short-wavelength semiconductor light-emitting diode represented by GaN can emit blue light with a shorter wavelength than red light because of its wider band gap, and the high-brightness blue light diode The white light diode prepared by combining yellow light phosphor has shown great potential in the white light lighting industry due to its low energy consu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/26
CPCH01L33/002H01L33/005H01L33/26
Inventor 吕有明曹培江韩舜朱德亮柳文军贾芳曾玉祥曾华
Owner SHENZHEN UNIV
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