Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for resisting single event burnout of power semiconductor devices

A power semiconductor, anti-single particle technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of thermal damage to the device, increase of internal current, etc., to improve the threshold voltage, suppress the SEB effect, improve the The effect of anti-SEB ability

Inactive Publication Date: 2016-09-14
HARBIN ENG UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the drift current formed by the holes generates enough voltage drop in the body region to turn on the parasitic bipolar junction transistor, the carrier avalanche multiplication effect will occur in the parasitic transistor, so that the internal current will continue to increase, eventually causing the device to heat up. damaged

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for resisting single event burnout of power semiconductor devices
  • A method for resisting single event burnout of power semiconductor devices
  • A method for resisting single event burnout of power semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The drift region of power semiconductor devices is evenly divided into 2-4 regions according to the lateral thickness. During implementation, it is divided into 3 regions, and the minority carrier lifetime is reduced for one of the regions; the drift region of power semiconductor devices is evenly divided into 2-4 regions according to the vertical thickness. , when implemented, it is divided into 3 regions, and the minority carrier lifetime is reduced for one of the regions. The region that reduces the minority carrier lifetime is selected from the region that has the greatest impact on the conduction of the parasitic tube of the power semiconductor device. Proton, neutron or electron irradiation methods are used to reduce the minority carrier lifetime.

[0016] The method and beneficial effects of the present invention will be further described below in conjunction with specific experiments.

[0017] Such as figure 1 As shown, the experiment selects 70V power UMOSFET...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a power semiconductor device anti-single particle burning method which is characterized in that a power semiconductor device drift region is evenly divided into two to four regions according to the transverse thickness, and minority carrier lifetime is shortened aiming to one of the regions; the power semiconductor device drift region is evenly divided into two to four regions according to the longitudinal thickness, and the minority carrier lifetime is shortened aiming to one of the regions.

Description

technical field [0001] The invention relates to a method for resisting single particle burning of a power semiconductor device. Background technique [0002] Power MOS (Metal-Oxide-Semiconductor) transistors are widely used in the fields of outer space and planetary exploration, and their working stability is limited by the natural radiation environment. Single-event burnout (SEB, Single-event Burnout) is caused by the injection of a heavy particle into the device under shutdown operation, and the incident particle generates a large number of electron-hole pairs along the trajectory, and the holes drift to the source region under the action of the electric field in the drift region . If the drift current formed by the holes generates enough voltage drop in the body region to turn on the parasitic bipolar junction transistor, the carrier avalanche multiplication effect will occur in the parasitic transistor, so that the internal current will continue to increase, eventually ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/26
CPCH01L29/0634H01L29/66666
Inventor 王颖于成浩曹菲胡海帆
Owner HARBIN ENG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com