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La2Zr2O7 transition-layer gradient film structure, preparation and application thereof

A transition layer and thin film technology, applied in the direction of coating, device for coating liquid on the surface, etc., to achieve the effect of simple structure, reduced complexity, smooth and dense surface

Active Publication Date: 2015-07-01
深创超导(深圳)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems existing in the preparation process of the existing coating conductor transition layer, and to provide a simple, efficient, and low-cost Ti and Y-doped La 2 Zr 2 o 7 Gradient film structure with a single matrix transition layer (such as figure 2 )

Method used

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  • La2Zr2O7 transition-layer gradient film structure, preparation and application thereof
  • La2Zr2O7 transition-layer gradient film structure, preparation and application thereof
  • La2Zr2O7 transition-layer gradient film structure, preparation and application thereof

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Embodiment 1

[0030] 1) Preparation of Ti-doped precursor solution: Titanium acetylacetonate and zirconium acetylacetonate, according to the molar ratio of titanium ions to zirconium ions is 1:9, where x=0.2, the total concentration of titanium ions and zirconium ions is 0.6mol / L, dissolved in propionic acid, and rotated and stirred at 40°C for 30 minutes to obtain a Ti-doped precursor solution;

[0031] 2) Preparation of Y-doped precursor solution: yttrium acetate and zirconium acetylacetonate, the molar ratio of yttrium ion to zirconium ion is 2:3, wherein, y=0.8, the total concentration of titanium ion and zirconium ion is 0.8mol / L, dissolved in propionic acid, and rotated and stirred at 40°C for 30 minutes to obtain a Y-doped precursor solution;

[0032] 3) Coating of the precursor solution: apply the Ti-doped precursor solution to the metal Ni substrate by spin coating to obtain the first layer of precursor film;

[0033] 4) High temperature sintering: in Ar4%H 2 Under the conditio...

Embodiment 2

[0037] 1) Preparation of Ti-doped precursor solution: Titanium acetylacetonate and zirconium acetylacetonate, according to the molar ratio of titanium ions to zirconium ions is 1:3, where x=0.5, the total concentration of titanium ions and zirconium ions is 0.6mol / L, dissolved in propionic acid, and rotated and stirred at 40°C for 30 minutes to obtain a Ti-doped precursor solution;

[0038] 2) Preparation of Y-doped precursor solution: yttrium acetate and zirconium acetylacetonate, the molar ratio of yttrium ion to zirconium ion is 1:1, where, y=1.0, the total concentration of titanium ion and zirconium ion is 1.0mol / L, dissolved in propionic acid, and rotated and stirred at 40°C for 30 minutes to obtain a Y-doped precursor solution;

[0039] 3) Coating of the precursor solution: apply the Ti-doped precursor solution to the metal Ni substrate by spin coating to obtain the first layer of precursor film;

[0040] 4) High temperature sintering: in Ar4%H 2 Under the condition ...

Embodiment 3

[0044] 1) Preparation of Ti-doped precursor solution: Titanium acetylacetonate and zirconium acetylacetonate, according to the molar ratio of titanium ions to zirconium ions is 1:1, where x=1.0, the total concentration of titanium ions and zirconium ions is 0.8mol / L, dissolved in propionic acid, and rotated and stirred at 40°C for 30 minutes to obtain a Ti-doped precursor solution;

[0045] 2) Preparation of Y-doped precursor solution: yttrium acetate and zirconium acetylacetonate, the molar ratio of yttrium ion to zirconium ion is 3:2, wherein, y=1.2, the total concentration of titanium ion and zirconium ion is 0.8mol / L, dissolved in propionic acid, and rotated and stirred at 40°C for 30 minutes to obtain a Y-doped precursor solution;

[0046] 3) Coating of the precursor solution: apply the Ti-doped precursor solution on the metal substrate by spin coating to obtain the first layer of precursor film;

[0047] 4) High temperature sintering: in Ar4%H 2 Under the condition o...

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Abstract

A La2Zr2O7 transition-layer gradient film structure, preparation and application thereof belong to the technical field of a high-temperature superconductive coating material. According to the La2Zr2O7 transition-layer film provided by the invention, the lower layer is a La2Zr2-xTixO7 film doped with Ti<4+> having small ionic radius, wherein x is less than or equal to 1.8 and greater than or equal to 0.2; and the upper layer is a La2Zr2-yYyO7 film doped with Y<3+> having large ionic radius, wherein y is less than or equal to 1.8 and greater than or equal to 0.2. Through different doping contents, 100% matching between the film and a substrate Ni and a superconducting layer YBCO is realized, and the transition-layer structure of lattice constant gradient change is realized. In addition, the transition layer is the same bulk material and has more stable performance. Lattice constants of the La2Zr2-xTixO7 film and the La2Zr2-yYyO7 film are accurate and adjustable. Integration of multiple transition-layer functions is achieved, and complexity of a present transition-layer structure is minimized.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting material production, and in particular relates to the preparation technology of a high-temperature superconducting coating conductor transition layer. Background technique [0002] Due to the strong anisotropy of the high-temperature superconducting material YBCO, its current-carrying capacity is extremely sensitive to lattice mismatch, and a large lattice mismatch angle will form weak connections, seriously affecting its superconducting performance. Therefore, it is necessary to deposit YBCO on metal substrates with biaxial texture. Due to the brittleness of YBCO ceramics, in recent years, people have used polycrystalline ductile NiW metal substrates to deposit superconducting films to texture their epitaxial substrates to obtain highly oriented YBCO superconducting films. [0003] However, due to the certain lattice mismatch between NiW alloy and YBCO superconducting ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/50C04B35/622B05D1/38B05D7/14
Inventor 索红莉任程刘敏仪宁田辉徐燕
Owner 深创超导(深圳)科技有限公司
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