Source delivery mixing ratio adjustable air circuit device

A technology of mixing ratio and mixing pipeline, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as influence, and achieve the effect of avoiding pollution and high uniformity

Active Publication Date: 2016-04-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0007] In view of the above technical problems, the present invention provides a gas path device with adjustable source delivery mixing ratio to overcome the problem that the residual gas in the early stage may affect the source gas in the later stage

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  • Source delivery mixing ratio adjustable air circuit device
  • Source delivery mixing ratio adjustable air circuit device

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints.

[0027] The invention provides a gas path device with adjustable mixing ratio for source delivery, which can realize the independent controllability of the sour...

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Abstract

The invention provides a source conveying gas path device with an adjustable mixing ratio. The source conveying gas path device comprises a carrier gas main pipeline, M pneumatic valves and N source carrier gas mixing pipelines, wherein an inlet of the carrier gas main pipeline is connected with a carrier gas source; outlets of the M pneumatic valves are respectively connected to M growing positions in a film deposition cavity; for each of the N source carrier gas mixing pipelines, an inlet of the source carrier gas mixing pipeline is connected to the carrier gas main pipeline, an organic source gas and an inlet of a doped source gas specific to the organic source gas, and M outlets are respectively connected to inlets of corresponding pneumatic valves in the M pneumatic valves. According to the source conveying gas path device, different reaction source materials are respectively sent to a reaction chamber through respective growing pipelines, and thus a reaction source material is prevented from being polluted in a first time and a final time.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a gas path device with adjustable source delivery mixing ratio applied in a thin film deposition device. Background technique [0002] MOCVD (MetalOrganic Chemical Vapor Deposition, Metal Organic Chemical Vapor Deposition) equipment is the key equipment for the research and production of compound semiconductor epitaxy materials. It is especially suitable for the large-scale industrial production of compound semiconductor functional structural materials. It is the core semiconductor equipment that cannot be replaced by other semiconductor equipment. The main means of producing semiconductor optoelectronic devices and microwave device materials in the world today is an indispensable strategic high-tech semiconductor equipment for the development of today's information industry and national defense high-tech breakthroughs. [0003] To grow thin film mat...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/52
Inventor 王晓亮肖红领陈竑殷海波冯春姜丽娟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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