A semiconductor laser synthesizer therapeutic instrument
A semiconductor and synthesizer technology, applied in the field of medical devices, can solve the problems of poor stability, large power fluctuations, and harmful injuries to patients due to power fluctuations, achieving stable performance, enhancing controllable functions, and taking into account both efficiency and stability. Effect
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Embodiment 1
[0048] The pump semiconductor laser 1 adopts 808nm LD (in the form of multiple combinations), and the optical coupling system 2 can be a commonly used LD laser coupling component, such as a spherical mirror, an aspheric mirror, a binary optical lens, or a combination thereof , and prepare an anti-reflection coating for pump light on its light-passing surface. The laser medium crystal 4 adopts Nd:YVO4 crystal, the plane reflector 3 is coated with an optical film for anti-reflection of 808nm and total reflection of 1342nm laser, the plane output mirror 5 is coated with an optical film of partial reflection of 1342nm and total reflection of 671nm, frequency doubling crystal 6 adopts PPLN, and the plane feedback mirror 7 is coated with an optical film for anti-reflection at 671nm and total reflection at 1342nm.
[0049] Turn on the power supply 10, and the laser output from the semiconductor laser 1 for pumping is focused on the laser dielectric crystal 4 through the optical coupl...
Embodiment 2
[0051] The semiconductor laser 1 for pumping adopts 880nm LD (in the form of multiple combinations), and the optical coupling system 2 can be a commonly used LD laser coupling component, such as a spherical mirror, an aspheric mirror, a binary optical lens, or a combination thereof , and prepare an anti-reflection coating for pump light on its light-passing surface. The laser medium crystal 4 adopts Nd:YVO4 crystal, the reflector 3 is coated with a film system that is anti-reflective at 880nm and fully reflective to 1342nm laser, the output mirror 5 is coated with a film system with partial reflection at 1342nm and total reflection at 671nm, and the frequency doubling crystal 6 is used LBO crystal, feedback mirror 7 is coated with 671nm anti-reflection film and 1342nm total reflection film.
[0052] Turn on the power supply 10, and the laser output from the semiconductor laser 1 for pumping is focused on the laser dielectric crystal 4 through the optical coupling system 2. Aft...
Embodiment 3
[0054] The pump semiconductor laser 1 adopts 808nm LD (in the form of multiple combinations), and the optical coupling system 2 can be a commonly used LD laser coupling component, such as a spherical mirror, an aspheric mirror, a binary optical lens, or a combination thereof , and prepare an anti-reflection coating for pump light on its light-passing surface. The laser medium crystal 4 adopts Nd:GdVO4 crystal, the plane reflector 3 is coated with anti-reflective film system for 808nm and total reflection for 1340nm laser, the plane output mirror 5 is coated with film system for partial reflection at 1340nm and total reflection for 670nm, frequency doubling crystal 6 adopts PPKTP crystal, and the plane feedback mirror 7 is coated with anti-reflection film for 670nm and total reflection film for 1340nm.
[0055] Turn on the power supply 10, and the laser output from the semiconductor laser 1 for pumping is focused on the laser dielectric crystal 4 through the optical coupling sy...
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