Plasma processing device and method for adjusting process rate in edge region of substrate

Abstract

The invention relates to a plasma processing apparatus and a method for adjusting a process rate of a marginal area of a substrate. The plasma processing apparatus comprises a cavity, a pedestal arranged in the cavity, a gas spay header arranged at the top of the cavity, a lower electrode arranged in the pedestal, a focusing ring arranged around the substrate, an edge electrode, and a phase shifter. To be specific, an electrostatic chuck is arranged above the pedestal; and a substrate is arranged above the electrostatic chuck. The gas spay header is used as an upper electrode; and process gas enters the cavity through the gas spay header. The lower electrode is connected with a first radio frequency power supply. The edge electrode approaches the edge area of the substrate and is connected with a second radio frequency power supply. And the phase shifter is connected with the first radio frequency power supply and the second radio frequency power supply. According to the invention, the edge effect can be effectively compensated; and phenomena of arc discharging and sparking due to the short distance between voltages applied to the central zone and the edge zone of the substrate can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma processing device and a method for adjusting the process rate in the edge region of a substrate. Background technique [0002] The plasma processing device uses the working principle of the vacuum reaction chamber to process the semiconductor substrate and the substrate of the plasma flat panel. The working principle of the vacuum reaction chamber is to pass a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to activate the reaction gas to ignite and maintain the plasma body, in order to respectively etch the material layer on the surface of the substrate or deposit the material layer on the surface of the substrate, and then process the semiconductor substrate and the plasma plate. For example, capacitive plasma reactors have been wide...

AI Technical Summary

Problems solved by technology

[0004] Since the semiconductor process part is circular, the area of ​​the outer ring is larger, and the poor uniformity of each process link in the edge part will lead to a significant drop in yield

Today, when the 300MHZ process is widely used, the loss caused by the edge effect of semiconductor process parts is even greater

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